Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz

• Y. Yamashita

• A. Endoh

• K. Shinohara

• K. Hikosaka

• T. Matsui

• S. Hiyamizu

• T. Mimura

収録刊行物

• IEEE Electron Device Letters

  IEEE Electron Device Letters 23 (10), 573-575, 2002-10

  Institute of Electrical and Electronics Engineers (IEEE)

キーワード

• Electrical and Electronic Engineering
• Electronic, Optical and Magnetic Materials

詳細情報

• CRID: 1363388843635070208
• NII論文ID: 80015595402
• DOI: 10.1109/led.2002.802667
• ISSN: 15580563
• ISSN: 07413106
• ISSN: http://id.crossref.org/issn/00135194
• Web Site: http://xplorestaging.ieee.org/ielx5/55/22270/01039171.pdf?arnumber=1039171
• データソース種別:
  • Crossref
  • CiNii Articles