Effect of Interfacial Structure on Organic Field Effect Transistor.

• KAMATA Toshihide

  National Institute of Advanced Industrial Science and Technology

• YOSHIDA Manabu

  National Institute of Advanced Industrial Science and Technology

• KODZASA Takehito

  National Institute of Advanced Industrial Science and Technology

• MATSUZAWA Makoto

  Science University of Tokyo

• KAWAI Takeshi

  Science University of Tokyo

Bibliographic Information

Other Title

• 有機電界効果トランジスタの特性に及ぼす界面の影響
• ユウキ デンカイ コウカ トランジスタ ノ トクセイ ニ オヨボス カイメン ノ エイキョウ

Abstract

We have examined electronic and structural interactions at the interfaces of organic semiconductors and their insulation layers or electrodes with regard to organic electric field effect transistors. It was revealed that the crystal structure of an organic semiconductor layer depends on its preparation conditions and the surface energy of the substrate, especially near field region of the interface. Also it was revealed that the control of the surface smoothness of the insulator layer, contact condition between the organic semiconductor layer and the insulator layer or electrode are essential to obtain an excellent FET characteristic.

Journal

• Hyomen Kagaku

  Hyomen Kagaku 24 (2), 69-76, 2003

  The Surface Science Society of Japan

Details

• CRID: 1390001206454430720
• NII Article ID: 130004486121
• NII Article ID: 80015773699
• NII Book ID: AN00334149
• DOI: 10.1380/jsssj.24.69
• COI: 1:CAS:528:DC%2BD3sXjtleqs7c%3D
• ISSN: 18814743
• ISSN: 03885321
• NDL BIB ID: 6460924
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6460924
• Web Site: http://www.jstage.jst.go.jp/article/jsssj/24/2/24_2_69/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed