Spectral and time-resolved photoluminescence studies of Eu-doped GaN

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  • Ei Ei Nyein
    Department of Physics, Hampton University, Hampton, Virginia 23668
  • U. Hömmerich
    Department of Physics, Hampton University, Hampton, Virginia 23668
  • J. Heikenfeld
    University of Cincinnati, Nanoelectronics Laboratory, Cincinnati, Ohio 45221
  • D. S. Lee
    University of Cincinnati, Nanoelectronics Laboratory, Cincinnati, Ohio 45221
  • A. J. Steckl
    University of Cincinnati, Nanoelectronics Laboratory, Cincinnati, Ohio 45221
  • J. M. Zavada
    US Army Research Office, Durham, North Carolina 27709

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<jats:p>We report on spectral and time-resolved photoluminescence (PL) studies performed on Eu-doped GaN prepared by solid-source molecular-beam epitaxy. Using above-gap excitation, the integrated PL intensity of the main Eu3+ line at 622.3 nm (5D0→7F2 transition) decreased by nearly 90% between 14 K and room temperature. Using below-gap excitation, the integrated intensity of this line decreased by only ∼50% for the same temperature range. In addition, the Eu3+ PL spectrum and decay dynamics changed significantly compared to above-gap excitation. These results suggest the existence of different Eu3+ centers with distinct optical properties. Photoluminescence excitation measurements revealed resonant intra-4f absorption lines of Eu3+ ions, as well as a broad excitation band centered at ∼400 nm. This broad excitation band overlaps higher lying intra-4f Eu3+ energy levels, providing an efficient pathway for carrier-mediated excitation of Eu3+ ions in GaN.</jats:p>

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