Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures

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  • Sten Heikman
    Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106
  • Stacia Keller
    Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106
  • Yuan Wu
    Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106
  • James S. Speck
    Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106
  • Steven P. DenBaars
    Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106
  • Umesh K. Mishra
    Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106

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<jats:p>The influence of AlGaN and GaN cap layer thickness on Hall sheet carrier density and mobility was investigated for Al0.32Ga0.68N/GaN and GaN/Al0.32Ga0.68N/GaN heterostructures deposited on sapphire substrates. The sheet carrier density was found to increase and saturate with the AlGaN layer thickness, while for the GaN-capped structures it decreased and saturated with the GaN cap layer thickness. A relatively close fit was achieved between the measured data and two-dimensional electron gas densities predicted from simulations of the band diagrams. The simulations also indicated the presence of a two-dimensional hole gas at the upper interface of GaN/AlGaN/GaN structures with sufficiently thick GaN cap layers. A surface Fermi-level pinning position of 1.7 eV for AlGaN and 0.9–1.0 eV for GaN, and an interface polarization charge density of 1.6×1013–1.7×1013 cm−2, were extracted from the simulations.</jats:p>

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