Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride
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- S. Arulkumaran
- Research Center for Nano-Device and System, Nagoya Institute of Technology, Showa-ku, Gokiso-cho, Nagoya 466-8555, Japan
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- T. Egawa
- Research Center for Nano-Device and System, Nagoya Institute of Technology, Showa-ku, Gokiso-cho, Nagoya 466-8555, Japan
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- H. Ishikawa
- Research Center for Nano-Device and System, Nagoya Institute of Technology, Showa-ku, Gokiso-cho, Nagoya 466-8555, Japan
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- T. Jimbo
- Research Center for Nano-Device and System, Nagoya Institute of Technology, Showa-ku, Gokiso-cho, Nagoya 466-8555, Japan
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- Y. Sano
- Advance Device Laboratory, Corporate Research and Development Center, Oki Electric Industry Co. Ltd., 550-5 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan
抄録
<jats:p>Surface passivation effects were studied on AlGaN/GaN high-electron-mobility transistors (HEMTs) using SiO2, Si3N4, and silicon oxynitride (SiON) formed by plasma enhanced chemical vapor deposition. An increase of IDmax and gmmax has been observed on the passivated (SiO2, Si3N4 and SiON) HEMTs when compared with the unpassivated HEMTs. About an order of magnitude low IgLeak and three orders of magnitude high IgLeak was observed on Si3N4 and SiO2 passivated HEMTs, respectively, when compared with the unpassivated HEMTs. The increase of IgLeak is due to the occurrence of surface related traps, which was confirmed by the observation of kink and hysteresis effect on dc and ac IDS–VDS characteristics, respectively. Though the Si3N4 passivated HEMTs show better dc characteristics, the breakdown voltage (BVgd) characteristics are not comparable with SiO2, SiON passivated and unpassivated HEMTs. The SiON is also a very promising candidate as a surface passivant for AlGaN/GaN HEMTs because it shows better BVgd with low hysteresis width and small ID collapse than Si3N4 passivated HEMTs.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 84 (4), 613-615, 2004-01-26
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360011144228753280
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- NII論文ID
- 80016404224
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- ISSN
- 10773118
- 00036951
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