Channel Structure Design, Fabrication and Carrier Transport Properties of Strained-Si/SiGe-on-insulator (strained-SOI) MOSFETs

• TAKAGI S.

収録刊行物

• Dig. of Int. Elect. Device Meeting, 2003

  Dig. of Int. Elect. Device Meeting, 2003 2003

詳細情報

• CRID: 1571698601689147648
• NII論文ID: 80016426087
• データソース種別:
  • CiNii Articles