Elastomeric Transistor Stamps: Reversible Probing of Charge Transport in Organic Crystals

• Vikram C. Sundar

  Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, USA.

• Jana Zaumseil

  Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, USA.

• Vitaly Podzorov

  Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, USA.

• Etienne Menard

  Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, USA.

• Robert L. Willett

  Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, USA.

• Takao Someya

  Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, USA.

• Michael E. Gershenson

  Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, USA.

• John A. Rogers

  Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, USA.

抄録

We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as ∼15 cm 2 /V·s and subthreshold slopes as low as 2nF·V/decade·cm 2 . Multiple relamination of the transistor stamp against the same crystal does not affect the transistor characteristics; we exploit this reversibility to reveal anisotropic charge transport at the basal plane of rubrene.

収録刊行物

• Science

  Science 303 (5664), 1644-1646, 2004-03-12

  American Association for the Advancement of Science (AAAS)

キーワード

• Multidisciplinary

詳細情報

• CRID: 1363951795397024640
• NII論文ID: 80016549241
• DOI: 10.1126/science.1094196
• ISSN: 10959203
• ISSN: 00368075
• Web Site: https://www.science.org/doi/pdf/10.1126/science.1094196
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  • CiNii Articles