High-voltage normally off GaN MOSFETs on sapphire substrates

• MATOCHA K.

収録刊行物

• IEEE Transactions on Electron Devices

  IEEE Transactions on Electron Devices 52 (1), 6-10, 2005-01

  Institute of Electrical and Electronics Engineers (IEEE)

キーワード

• Electrical and Electronic Engineering
• Electronic, Optical and Magnetic Materials

詳細情報

• CRID: 1363670319419148416
• NII論文ID: 80017186825
• DOI: 10.1109/ted.2004.841355
• ISSN: 15579646
• ISSN: 00189383
• Web Site: http://xplorestaging.ieee.org/ielx5/16/30008/01372701.pdf?arnumber=1372701
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