AlGaN/GaN MIS-HFETs with f/sub T/ of 163 GHz using cat-CVD SiN gate-insulating and passivation Layers

• M. Higashiwaki

• T. Matsui

• T. Mimura

収録刊行物

• IEEE Electron Device Letters

  IEEE Electron Device Letters 27 (1), 16-18, 2006-01

  Institute of Electrical and Electronics Engineers (IEEE)

キーワード

• Electrical and Electronic Engineering
• Electronic, Optical and Magnetic Materials

詳細情報

• CRID: 1360292620187477120
• NII論文ID: 80017707819
• DOI: 10.1109/led.2005.860884
• ISSN: 07413106
• Web Site: http://xplorestaging.ieee.org/ielx5/55/33147/01561441.pdf?arnumber=1561441
• データソース種別:
  • Crossref
  • CiNii Articles