Ultraflexible organic field-effect transistors embedded at a neutral strain position

DOI PDF 被引用文献27件
  • Tsuyoshi Sekitani
    University of Tokyo Quantum Phase Electronics Center, School of Engineering, , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Shingo Iba
    University of Tokyo Quantum Phase Electronics Center, School of Engineering, , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Yusaku Kato
    University of Tokyo Quantum Phase Electronics Center, School of Engineering, , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Yoshiaki Noguchi
    University of Tokyo Quantum Phase Electronics Center, School of Engineering, , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Takao Someya
    University of Tokyo Quantum Phase Electronics Center, School of Engineering, , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Takayasu Sakurai
    University of Tokyo Center for Collaborative Research, , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

抄録

<jats:p>We fabricated ultraflexible pentacene field-effect transistors (FETs) with a mobility of 0.5cm2∕Vs and an on/off ratio of 105, which are functional at the bending radius less than 1mm. The transistors are manufactured on a 13-μm-thick polyimide film and covered by a 13-μm-thick poly-chloro-para-xylylene encapsulation layer so that transistors can be embedded at a neutral position. This sandwiched structure can drastically suppress strain-induced changes in transistor characteristics. Furthermore, the FETs show no significant change after bending cycles of 60 000 times on inward and outward bending stresses.</jats:p>

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