Demonstration of Asymmetric Gate-Oxide Thickness Four-Terminal FinFETs Having Flexible Threshold Voltage and Good Subthreshold Slope

• Meishoku Masahara

• Radu Surdeanu

• Liesbeth Witters

• Gerben Doornbos

• Viet H. Nguyen

• Geert Van den bosch

• Christa Vrancken

• Katia Devriendt

• Francois Neuilly

• Eddy Kunnen

• Malgorzata Jurczak

• Serge Biesemans

収録刊行物

• IEEE Electron Device Letters

  IEEE Electron Device Letters 28 (3), 217-219, 2007-03

  Institute of Electrical and Electronics Engineers (IEEE)

キーワード

• Electrical and Electronic Engineering
• Electronic, Optical and Magnetic Materials

詳細情報

• CRID: 1360574095784115840
• NII論文ID: 80018630382
• DOI: 10.1109/led.2007.891303
• ISSN: 07413106
• Web Site: http://xplorestaging.ieee.org/ielx5/55/4114563/04114576.pdf?arnumber=4114576
• データソース種別:
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  • CiNii Articles