High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

• M. Gonschorek

  Institute of Quantum Electronics and Photonics , Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

• J.-F. Carlin

  Institute of Quantum Electronics and Photonics , Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

• E. Feltin

  Institute of Quantum Electronics and Photonics , Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

• M. A. Py

  Institute of Quantum Electronics and Photonics , Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

• N. Grandjean

  Institute of Quantum Electronics and Photonics , Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

Abstract

Room temperature electron mobility of 1170cm2∕Vs is obtained in an undoped, lattice-matched, Al0.82In0.18N∕GaN field-effect transistor heterostructure, while keeping a high (2.6±0.3)×1013cm−2 electron gas density intrinsic to the Al0.82In0.18N∕GaN material system. This results in a two-dimensional sheet resistance of 210Ω∕◻. The high mobility of these layers, grown by metal-organic vapor phase epitaxy on sapphire substrate, is obtained thanks to the insertion of an optimized AlN interlayer, reducing the alloy related interface roughness scattering.

Journal

• Applied Physics Letters

  Applied Physics Letters 89 (6), 062106-, 2006-08-07

  AIP Publishing

Keywords

• Physics and Astronomy (miscellaneous)

Details

• CRID: 1360292620900695936
• NII Article ID: 80018952236
• DOI: 10.1063/1.2335390
• ISSN: 10773118
• ISSN: 00036951
• Web Site: https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2335390/14352260/062106_1_online.pdf
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