Transition metal impurities in semiconductors
著者
書誌事項
Transition metal impurities in semiconductors
Hilger, 1986
- タイトル別名
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Primesi perekhodnykh materialov v poluprovodnikakh
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注記
Includes bibliography
Translation of: Primesi perekhodnykh materialov v poluprovodnikakh
内容説明・目次
内容説明
The study of impurities and defects in semiconductors is of fundamental interest and is important for technological applications. This monograph is a first attempt to generalise experimental data and theoretical interpretation about the nature and behaviour of impurity atoms of transition metals in semiconductors. The nature of impurities and changes in their electronic structure are analysed. The molecualr orbital approach is followed extensively in the theoretical interpretation, with particular emphasis on crystal field splitting, electron paramagnetic resonance and optical absorption spectoscopies. Coverage of experimental data is extensive with more the 300 references to the literature. This is a translation of a Russian text published in 1983. The authors have updated the content for the English language edition. This book will be of interest to scientists and engineers in solid state physics and chemistry, materials science and electronic engineering. It should also be useful for postgraduate students in these fields.
目次
Introduction. State of transition metal impurities in crystal lattices of semiconductors. Energy spectrum of deep levels of impurity centres. Theoretical representations. Energy spectrum of deep-level T impurity centres. Experimental results. Magnetic effects in semiconductors doped with transition-metal impurities. Conclusions. Bibliography. Additional references for the English edition.
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