High temperature electronics : Proceedings of Symposium E on High Temperature Electronics: Materials, Devices and Applications, of the E-MRS Spring Conference, Strasbourg, France, May 24-27 1994
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High temperature electronics : Proceedings of Symposium E on High Temperature Electronics: Materials, Devices and Applications, of the E-MRS Spring Conference, Strasbourg, France, May 24-27 1994
（European Materials Research Society symposia proceedings, 50）
Esevier, 1995
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Materials science and engineering
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内容説明・目次
内容説明
The majority of the papers presented here deal with the topic of SiC and reflect the progress made in recent years concerning the material quality of SiC. Other papers deal with the problems of the technology of GaAs and the material growth and investigation of GaN. The silicon related papers present complete circuits as well as new technologies. Some papers deal with the modelling of devices at increased temperatures. New results on crystalline and polycrystalline diamond are presented in six papers and the problem of material growth is also addressed here. The final papers deal with materials concerning thermoelectric power conversion and demonstrate the importance of high temperature electronics.
目次
- Part 1 Silicon, SOI: silicon-on-insulator technology for high-temperature, smart-power applications, J. Korec
- silicon-on-insulator technology for high temperature metal oxide semiconductor devices and circuits, D. Flandre
- Monte Carlo simulation of growth and recovery of silicon, S. Kersulis and V. Mitrin. Part 2 III-V compounds: III-V semiconductor properties for high-temperature electronics, H.L. Hartnagel
- the optical properties and electronic transitions of cubic and hexagonal GaN films between 1.5 and 10eV, S. Logothetidis et al
- growth of bulk SiC, Yu. M. Tairov
- are polytype transitions possible during boron diffusion, J. Pezoldt
- unintentional incorporation of contaminants during chemical vapour deposition of silicon carbide, S. Karmann et al
- reactive ion etching characterization of a-SiC - H in CF4/O2 plasma, G. Saggio et al
- high temperature silicon carbide stabilitrons for the voltage range from 4 to 50 V, A.N. Andreev et al. Part 3 Diamond: macrodefect formation in semiconductors during high energy ion implantation - Monte Carlo simulation of damage depth distributions, S.A. Fedotov et al
- boron doped diamond films - electrical and optical characterization and the effect of compensating nitrogen, R. Locher et al. Part 4 Power conversion: Boron-rich solids - a chance for high-efficiency high-temperature thermoelectric energy conversion, H. Werheit.
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