Properties of silicon carbide
著者
書誌事項
Properties of silicon carbide
（EMIS datareviews series, no. 13）
INSPEC, c1995
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注記
Includes bibliographical references and index
At foot of t.p.: IEE
内容説明・目次
内容説明
An overview of current SiC research, which covers basic physical properties, optical properties, spectroscopic characterization, defects, the diffusion of impurities, etching, selective doping and crystal growth, microstructure, electronic properties and SiC-based devices.
目次
- Basic physical properties
- optical and paramagnetic properties
- carrier properties and band structure
- energy levels
- surface structure, metallization and oxidation
- etching
- diffusion of impurities and ion implantation
- bulk and epitaxial growth
- contacts and junctions
- Schottky diodes, transistors and optoelectronic devices.
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