Properties of wide bandgap II-VI semiconductors

Author(s)

• INSPEC (Information service)
• Bhargava, Rameshwar Nath

Bibliographic Information

Properties of wide bandgap II-VI semiconductors

edited by Rameshwar Bhargava

（EMIS datareviews series, no. 17）

INSPEC, Institution of Electrical Engineers, c1997

Note

Includes bibliographical references and index

Description and Table of Contents

Description

This volume pools the present research knowledge regarding semiconductors which comprise elements from groups II and VI of the periodic table. These semiconductors are generating intense research activity worldwide as a result of their use in blue green diodes.

Table of Contents

• Elastic properties
• piezoelectric constants
• structural and thermal properties
• energy gaps of binaries, ternaries and quaternaries
• Fermi pinning
• bandgap engineering
• nanocrystals
• bulk and epitaxial growth
• optical absorption
• exciton binding energies
• nonlinear coefficients
• carrier mobilities
• minority carrier lifetimes
• deep impurity levels
• barrier heights
• long-lived II-VI lasers
• optically pumped lasers
• electron beam pumped lasers
• electroluminescence
• phosphors
• solar cells.

by "Nielsen BookData"

Details

• NCID: BA31895114
• ISBN:
  • 0852968825
• Country Code: uk
• Title Language Code: eng
• Text Language Code: eng
• Place of Publication: London ; New York
• Pages/Volumes: xiv, 247 p.
• Size: 29 cm
• Parent Bibliography ID:
  • BA01124057