Light emission from silicon : INSEL 96 Conference, University of Rome 'La Sapienza' - Rome, Italy, November 11-12, 1996

著者

    • INSEL
    • Ferrari, Aldo

書誌事項

Light emission from silicon : INSEL 96 Conference, University of Rome 'La Sapienza' - Rome, Italy, November 11-12, 1996

editor, Aldo Ferrari

(Diffusion and defect data : solid state data, pt. B . Solid state phenomena ; v. 54)

Scitec Publications, c1997

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注記

"European Community - Commission DGIII"

Includes bibliographical references and indexes

内容説明・目次

内容説明

This volume presents the most recent results concerning the various approaches to obtaining light emission from silicon. This dream of silicon technologists is inspired by the fact that an efficient and stable silicon light emitting device would open the way to the production of monolithic optoelectronic integrated circuits, that were based entirely upon silicon. In fact, some of the main building blocks of optoelectronic devices, such as waveguides and photodetectors have already been developed by using silicon technology. The above possibility would sharply reduce the price of optoelectronic circuits as compared with hybrid ones.

目次

The ESPRIT Advanced Research Initiative in Optoelectronics MEL-ARI OPTO Silicon Emitting Device Will Knock Down Communication Bottleneck? AFM and STM Investigations of Electroluminescent SiO2/Si Superlattices Prepared by Chemical Vapour Deposition Characterization of Porous Silicon Light Emitting Diodes in High Current Density Conditions On the Route towards Efficient Light Emitting Diodes Based on Porous Silicon Light Emission Characterization of Al-Porous Silicon Schottky Junction Amorphous Silicon Photodetectors for Silicon Based Optical Waveguides Porous Silicon Bragg Reflectors for Colour Sensing Applications Ge/Si (001) Photodetector for Near Infrared Light Optical and Morphological Properties of Stain-Etched Porous Silicon Films for Anti-Reflection Coatings of Photovoltaic Devices The Colourful World of Porous Silicon: From Interference Filters to Applications Humidity Sensor Based on Partially Oxidized Porous Silicon Influence of the Host Composition on the Equilibrium Structure of Er-Centers in Silicon Visible and IR Photoluminescence of Erbium Doped Porous Silicon Films Structural and Thermal Properties of High Porosity Freeze-Dried Porous Silicon Thin Films of Granular Silicon: Electrical, Structural and Optical Characterization Time-Resolved Spectroscopy and Photoassisted STM Investigations of Laser Deposited Porous Silicon The Optical Transition in a Si Wire Passivated by H and O-H

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詳細情報

  • NII書誌ID(NCID)
    BA35682997
  • ISBN
    • 3908450241
  • 出版国コード
    sz
  • タイトル言語コード
    eng
  • 本文言語コード
    eng
  • 出版地
    Zuerich-Uetikon
  • ページ数/冊数
    xi, 136 p.
  • 大きさ
    25 cm
  • 親書誌ID
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