Silicon-germanium strained layers and heterostructures

書誌事項

Silicon-germanium strained layers and heterostructures

S.C. Jain, M. Willander

(Semiconductors and semimetals, v. 74)

Academic Press, 2003

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注記

Includes bibliographical references (p. 243-280) and index

内容説明・目次

内容説明

The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.

目次

  • Introduction
  • Strain, Stability, reliability and growth
  • mechanism of strain relaxation
  • strain, growth, and TED in SiGeC layers
  • Bandstructure and related properties
  • Heterostructure Bipolar Transistors
  • FETs and other devices.

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