New functional materials and emerging device architectures for nonvolatile memories : symposium held April 25-29, 2011, San Francisco, California, U.S.A.
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New functional materials and emerging device architectures for nonvolatile memories : symposium held April 25-29, 2011, San Francisco, California, U.S.A.
(Materials Research Society symposium proceedings, v. 1337)
Materials Research Society , Cambridge University Press, 2011
- : hard
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注記
"Symposium Q, 'New Functional Materials and Emerging Device Architectures for Nonvolatile Memories' held April 25-29 at the 2011 MRS Spring meeting in San Francisco, California ... including the following: 1)Symposium 'Materials and Physics for Non-Volatile Memories' ... ; 2)Symposium 'Materials and Processes for Non-Volatile Memories' ... ; 3)the Symposium series titled 'Materials Science and Technology of Non-Volatile Memories' ... ; the Symposia entitled 'Materials and Physics for Non-Volatile Memories'
Includes bibliographical references and indexes
内容説明・目次
内容説明
目次
- Part I. Advanced Flash and Nano-Floating Gate Memories: 1. Scaling challenges for NAND and replacement memory technology Kirk Prall
- 2. Growth and in-line characterization of silicon nanodots integrated in discrete charge trapping non-volatile memories Julien Amouroux
- 3. Matrix density effect on morphology of germanium nanocrystals embedded in silicon dioxide thin films Arif Alagoz
- 4. Temperature effects on charge transfer mechanisms of nc-ITO embedded ZrHfO high-k nonvolatile memory devices Yue Kuo
- 5. Enhancement of nonvolatile floating gate memory devices containing AgInSbTe-SiO2 nanocomposite by inserting HfO2/SiO2 blocking oxide layer Tsung-Eong Hsieh
- Part II. Resistive Switching Memories: 6. Complementary resistive switches (CRS): high speed performance for the application in passive nanocrossbar arrays Roland Rosezin
- 7. Influence of copper on the switching properties of hafnium oxide-based resistive memory Benjamin Briggs
- 8. Fabrication and characterization of copper oxide resistive memory devices Seann Bishop
- 9. Influence of process parameters on resistive switching in MOCVD NiO films Dirk Wouters
- 10. Understanding the role of process parameters on the characteristics of transition metal oxide RRAM/memristor devices Rashmi Jha
- 11. Memristive switches with two switching polarities in a forming free device structure Rainer Bruchhaus
- 12. WOx resistive memory elements for scaled flash memories Judit G. Lisoni
- 13. Memory retention characteristics of data storage area written in transition metal oxide films by using atomic force microscope Kentaro Kinoshita
- 14. A survey of metal oxides and top electrodes for resistive memory devices Seann Bishop
- 15. Switching speed in resistive random access memories (RRAMs) based on plastic semiconductor Paulo Rocha
- 16. Retentivity of RRAM devices based on metal/YBCO interfaces Carlos Acha
- 17. Electro-forming of vacancy-doped metal-SrTiO3-metal structures Barbara Abendroth
- Part III. Phase Change, Ferroelectric, and Organic Memories: 18. Interface characterization of metals and metal-nitrides to phase change materials Deepu Roy
- 19. Investigation on phase change behaviors of Si-Sb-Te alloy: the effect of tellurium segregation Xilin Zhou
- 20. Recent progress in downsizing FeFETs for Fe-NAND application Shigeki Sakai
- 21. Lanthanum oxide capping layer for solution-processed ferroelectric-gate thin-film transistors Tue Phan
- 22. New MEH-PPV based composite materials for rewritable nonvolatile polymer memory devices Mikhail Dronov
- 23. Planar non-volatile memory based on metal nanoparticles Asal Kiazadeh.
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