三好, 正毅, 飯村, 靖文, 岩井, 荘八, 青柳, 克信, 瀬川, 勇三郎, 難波, 進
レーザー科学研究
11
129-131,
1989
Raman spectra were measured at 300K in thin layers grown by laser atomic layer epitaxy in order to characterize the layers of alloy semiconductors. Two Raman lines were observed in Ga_<1-x>Al_xAs …
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