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表紙
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日本結晶成長学会定款
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第31回結晶成長国内会議概要
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i-ii
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会場案内
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iii-iv
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日程表
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v-vii
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プログラム
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viii-xxv
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Tensile test of Si subsidiary cone at high temperature
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1
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Dislocation-free CZ-Si crystal growth without the Dash-necking process
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2
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Temperature gradient near the growth interface in CZ-Si crystal growth
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3
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Relation Between Temperature Gradient and Growth Rate in Silicon Growth
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4
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Dislocations and Crystal-melt Interface Shape During the Melting of Silicon
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5
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Density of Silicon Melts
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6
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Melt flow variations with adding boron into the silicon melts
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7
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Investigation on the Surface of Silica Glass Reacting with Silicon Melt
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8
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Numerical study on the oxygen transport phenomena from silica to silicon melt
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9
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Oxygen transport in Si melts under inhomogeneous transverse magnetic fields
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10
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Study on OSF-ring in a CZ-Si crystal by light scattering tomography and TEM
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11
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Spontaneous Si-melt rotation in electrical conducting crucible
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12
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Remote Sensing of Induced Current in a Rotating Conductor in Magnetic Field
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13
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Present States and Problems of the GaN Epitaxial Substrate
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14
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Growth of GaN single crystals from vapor phase
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15
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Growth of GaN Bulk Crystals and Homoepitaxy
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16
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Hydride vapor phase epitaxy of GaN on NdGaO_3 substrates
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17
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Structural characterization of group-III nitride semiconductors and low-temperature buffer layers by X-ray
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18
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Experiment and Numerical Simulation on Growth Rate Distribution of GaN Thin Film in Vertical MOCVD Reactor
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19
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Growth and Characterizations of GaN by Ammonia Gas Source Molecular Beam Epitaxy
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20
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Structural characterization of ECR-MBE grown GaN layers using hydrogen-nitrogen mixed gas plasma
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21
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Gas-source MBE growth of GaN firms using tertiarybutylhydrazine as a nitrogen precursor
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22
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GaNP growth by photo-assisted MOCVD and its optical characterization
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23
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Large lateral growth rate in GaN grown directly on sapphire substrate by two-flow metalorganic vapor phase epitaxy
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24
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Dependence of GaN Decomposition Rate on Hydrogen Partial Pressure Using In Situ Gravimetric Monitoring Method
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25
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Heteroepitaxy and characterization of GaN single crystal on substrates with periodic straight trenches
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26
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Growth of C-GaN on Si(100) substrates
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27
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Maskless selective epitaxy of InGaN using a low energy focused ion beam
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28
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Characterization of FACELO (Facet Controlled ELO) GaN
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29
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AlGaN中間層を用いて作製したSi上選択成長GaNのTEM観察 : エピタキシャル成長II
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30
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Structure of LT-GaN buffer layer and effects On crystal growth of group-III nitrides
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31
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Real time observation and control of GaAs pyramids by microprobe-RHEED/SEM MBE
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32
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Si(001) step bunching induced by As deposition and crystallization of GaAs buffer layer
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33
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MBE growth of GaMnAS grown by sequential deposition of GaAs,Mn
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34
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Ga desorption during MBE growth of GaAS under high As vapor pressure
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35
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As pressure dependence of triangular-pyremidcal hillocks grown on (111)A GaAs substrates by MBE
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36
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Lateral Wet Oxidation of AlAS Layer Grown on High Index GaAs Substrate by MBE
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37
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X-ray CTR scattering measurement of InGaP/GaAs interface structures formed with different growth conditions during growth interruption
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38
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Investigation of group-III atom distributions at hetero-interfaces between III-V compound semiconductors by X-ray CTR scattering measurement
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39
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The influence of the high magnetic field to LPE growth process of GaP
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40
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Coalescence of ELO layers of InGaAS grown on patterned (111) GaAs by LPE
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41
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Study on the LPE growth of InGaAS pyramidal layers on (100) GaAs substrates
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42
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Photoluminescence properties of ZnTe films grown by photo-assisted MOVPE
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43
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Singular plane format ion in CdTe homoepitaxy
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44
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Coarsening process of tthehree-dimensional Ge islands on Si(111) in solid phase epitaxy
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45
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Observation of void-defects generation at SiC/Si interface by positron annihilation technique
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46
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Visual record of the crystal growth of a protein, Proteinase A
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47
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Nucleation of Protein Crystals : Verification of liquid-liquid phase separation Model
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48
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X-ray crystallographical aspects on the protein crystal growth in space and on earth
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49
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Measurement of concentration distribution in lysozyme solution during the crystal growth in a magnetic field
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50
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In-situ observation of the Marangoni flow of water under microgravity
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51
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Growth rates of ice crystals growing from sugar solutions
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52
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Adsorption of Antifreeze Glico Protein (AFGP) at the Ice/water Interface and its Effect for Interfacial Pattern Formation
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53
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Measurement of the temperature field around a dendritc growing crystal from Supercooled heavy water
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54
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High-Speed in-situ observation of crystal growth process in the silicate melt under micro-gravity.
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55
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Evaporation and condensation experiments of silicate melt in microgravity
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56
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Observation of gas hydrate formation by dynamic light scattering spectrophotometer
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57
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Observation of the growth process of Na_2S_2O_3・5H_2O spherulites by schlieren method
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58
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In situ observation of an early stage of GaAs_xP_<1-x>/GaP LPE growthThe institute of Space and Astronautical Science
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59
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Basic investigation of concentration measurement using conductivity in growth ofβ-BaB_2O_4 single crystals
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60
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Growth Method of KDP Single Crystal by Electrodialysis with the Computer Control System of pH and Supersaturation
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61
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Quasi-stable super-saturated region of over-heated KDP water-solution
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62
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Improvement of Crystallinity of Organic Nonlinear Optical Crystal DAST by Using Solution Stirring
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63
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Improvement of laser damage resistance of nonlinear optical crystal CLBO by Stirring the solution.
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64
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Three-electrode current and voltage characteristics for electrical nucleation of concentrated solution of sodium acetate trihydride
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65
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The development of the concentration measurement system of urea solution with the optical ratio of NH_4Cl
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66
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Crystal Growth of NaBrO_3 in Isolated Small Drops
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67
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The Relationships between growth rate and temperature in the NaBrO_3 crystal growing under a constant supersaturation
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68
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Growth Striae of KCl Crystals Grown from Aqueous Solution
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69
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Anthracene Microcrystal Growth by Laser Irradiation
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70
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Freezing-memory effect of water on nucleation of Gas hydrate crystals
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71
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Coagulation behavior of highly concentrated monodisperse latex suspension
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72
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Homogenization of colloidal Crystal by Shear flow
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73
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Formation of Fractal Calcium Carbonate Crystal with Silicate Ion
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74
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Observation of Solid-melt Interface Oscillation Induced by Marangoni Temperature Oscillation
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75
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Numerical analysis on the coexistence effect of natural and Marangoni convections in compound semiconductor melt
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76
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The effect of the gravity fluctuation on impurity-diffusion phenomena in the compound semiconductor melt under the microgravity
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77
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Numerical simulation of solid/liquid interface shape control during the compound semiconductor crystal growth by the THM
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78
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Numerical study on the control of melt convection during crystal growth of the compound semiconductor by the VGF method
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79
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Numerical simulation for ampoule rotation effect in InGaSb growth by rotational Bridgman method
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80
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Thermal conductivity of Cr doped forsterite single crystals
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81
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Crystal growth and characterization on borate aluminate and borate gallate
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82
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Observation of grown-in defects in BBO crystals by light scattering tomography
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83
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Fabrication of 3 mm-thick-periodically poled stoichiometric LiTaO_3
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84
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Photochromism in stoichiometric LN and LT and its application to volume holography
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85
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Characteristics of MgO doped near-stoichiometric LiNbO_3 crystals for harmonic NLO devices
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86
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Oxide melt rotation by electromagnetic force
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87
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Electric conductivity of molten oxides
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88
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Alleviation of photo-induced damages in GdYCOB by improvement crystalinity
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89
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Growth of Nd:GdVO_4 single crystals by the floating zone method
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90
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Large size SBN single crystal growth by the Czochralski technique using crucible-base cooling
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91
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Melt of langasite and crystal growth
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92
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Comparison of liquid phase and Vapor phase growth of YBa_2Cu_3O_<7_X>
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93
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MnBi Thin Films Grown by Molecular Beam Epitaxy
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94
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Epitaxial growth of Cu_2O films on MgO(001) by reactive sputtering
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95
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Epitaxial Growth of NaNO_3 on Calcite
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96
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Characterization of in-plane orientations in thin films of organic conductors by X-ray diffraction
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97
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Pressure dependence of growth form of organic systems
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98
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Curvature evolution at rough orientations
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99
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Melt Growth of Faceted Ice Crystal under Removal of Air and/or Heat of Crystallization
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100
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Interpretation of mixed habit of natural diamond by kinetic smoothening
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101
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Effect of volume diffusion on effective distribution coefficient of binary ideal solid solution
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102
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Terrace-Step-Kink Model with Adsorption
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103
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Elastic interaction between adatoms and between steps in a, discrete lattice model
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104
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Time-Dependent Correlation Functions of an Asymmetric Exclusion Process Model : Numerical Renormalization Approach
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105
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Two dimensional nucleation processes of alloy crystal by Monte Carlo simulation
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106
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Cluster distribution in alloy crystal under phase separated conditions by Monte Carlo simulation
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107
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Analysis of Nucleation from Molar Flux Balance in Diffuse Interface Layer
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108
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Analysis of Instability at Solid-Liquid Interface from Molar Flux Balance
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109
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The effect of the quasi-liquid layer in the unstable growth of Snow Crystals
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110
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Observation of growth interface of orthorhombic lysozyme crystals using AFM. : I. Morphology of growth interface and impurity effects
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111
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Observation of growth interface of orthorhombic lysozyme crystals using AFM. : II. Anisotropy of growthing step verocity at (110)face.
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112
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AFM observation of monoclinic HEWL crystal
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113
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Enhancements of resolution maximum of diffaction in protein crystal grown under high magnetic field
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114
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Morphology and Solubility of Taka-Amylase A (TAA) crystals
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115
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Comparison of the Crystal growth of Cytochrome c from Cow, horse, tuna and yeast
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116
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Fluid Dynamic Evaluation of Mass Transport Processes in Vapor Diffusion Method
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117
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Development of Vapor Diffusion Mass Transport Model to Optimize Protein Crystallization
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118
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Continuous-angle laser light scattering study of the precipitation kinetics of calcium phosphate minerals
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119
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Phase relations around the apatite phase in the Nd_2O_3-SiO_2 system
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120
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Imputiry effect on two-dimensional nucleation rate : A case study of hydroxyapatite (0001) face
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121
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Influence of Carboxyl Group on polymorphism of Even-numbered Fatty Acids
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122
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Kinetics of template-assisted heterogeneous nucleation
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123
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Template effect of emusifiers for fat Crystallization on oil-emulsifier interface of oil phase in O/W emulsion system
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124
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The effect of additives of hydrophobic emulsifiers on crystallization in O/W emulsion
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125
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Crystallization of Amino Acids induced at W/O microemulsioninterface
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126
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The Effect of Ultrasonication on Crystallization in Triacylglycerols
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127
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Formation and decay processes of isolated nano-structures on Si(111) surfaces.
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128-129
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Growth and Characterization of InN films
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130
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Effects of a Magnetic Field on the Growth Rate of Protein Crystals
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131-132
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Crystals growth and characterization of La_<2-2x>Sr_<1+2x>Mn_2O_7
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133
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Single crystal of Bi_2Sr_<2-x>La_xCuO_<6+δ>.
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134
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Y_yND_<1-y>Ba_2Cu_3O_x高温酸化物超伝導体の相図作成と結晶成長 : バルク成長VI
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135
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Crystal Growth of Volatile Toxic Cuprate Superconductors using Closed-Atmosphere type Gold Crucible
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136
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Crystal Growth of Delafossite-Type Transition-Metal Oxide (Pd,Pt)CoO_2
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137
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Synthesis of isotopically homogeneous crystal by floating-zone method : isotope effects by evaporation and agitation of melt
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138
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Precise isotopic analysis of silicon standard materials using SIMS
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139
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Crystallization and properties of tungsten bronze niobate thin films with preferred orientation
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140
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Synthesis of Epitaxial Films from Photoreactive Compound
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141
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Selective deposition of TiO_2 thin film on a self-assembled monolayer employing a tanium alkoxide
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142
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Crystallization of WO_3 thin film
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143
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Crystallization of vacuum evaporated amorphous SnO_2 film
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144
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Correlation between structures of vacuum evaporated In_2O_3 film and ITO film
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145
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Computational study for migration of As atom on Ga-terminated domains of GaAs(001) surface
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146
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First-principle calculations for the kinetics of As_2 molecule during homoepitaxial growth on GaAs(001) surface
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147
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Defect growth simulation of ZnSe/GaAs heteroepitaxy
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148
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Theoretical Study On the Epitaxial Growth and Misfit-Dislocations
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149
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An interatomic potential for nitride semiconductors : application to structural stability
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150
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Theoretical investigations of the epitaxial growth mechanism on a GaAs(111)A surface
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151
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Contribution of Lattice Constraint to Compositional Instability of InGaN
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152
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Relevance of Surface reconstruction to specular RHEED intensity on GaAS(001)
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153
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Atomic level formation mechanism of (7 x 7) DAS Structure on Si (111)
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154
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In-Situ STM observation of the process for homoepitaxial growth on Si (111)-(7 x 7) DAS Structure
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155
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Scaling Law of Decay Process of Isolated Silicon Pyramid on Si(111) Surface
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156
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Permeability of Steps and the Step Wandering Induced by Drift of Adatoms
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157
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Permeability of Steps and the Step Bunching Induced by Drift of Adatoms
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158
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Inter-step attraction of vicinal surface with adsorption and step bunching at equilibrium
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159
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Adatom structure on (111) surface of diamond crystal structure : The effect of excluded volume restriction and inter-adatom repulsion.
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160
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FT-IR analysis of a-SiC:H films on Plasma chemical vapor deposition II
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161
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Effects of isomer additives on meta-nitroaniline crystallization
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162
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Selective area growth of CuGaS_2 and observation of the crystal morphology
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163
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Multiwalled Carbon Nanotubes Produced by DC Arc Discharge in H_2 Gas
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164
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Preparation and properties of carbon coils by CVD under a high magnetic field
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165
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Screening of novel catalysts for the growth of carbon micro Coils
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166
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Effects of N_2 Plasma-activated CVD method for morphologies and characteristics of the carbon micro-coils.
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167
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Behavior of metal films on Si ultrafine particle
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168
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Growth of superfine crystals of Si by the disproportionation reaction of SiO
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169
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Growth of micro-diamond generated from quenched carbonaceous composite (QCC)
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170
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Structure of II-VI semiconductor ultra-fine particles covered with SiO or carbon layer
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171
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Singular morphology of particles prepared by the simultaneous gas evaporation of SiO and metal powders
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172
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Reduction process of metallic oxide ultrafine particles
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173
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The dispersion of AgCl in the KCl crystal
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174
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日本結晶成長学会総会の通知
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176
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第26回結晶成長討論会の案内
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177
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第31回結晶成長国内会議現地委員
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178
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日本結晶成長学会入会のご案内
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裏表紙
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