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表紙
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目次
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Control of height and density of GaN nano-structure and its antireflection and enhanced transmission properties
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1-5
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UV light emitting device grown on AlGaN with low-dislocation density
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7-12
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Recent Progress of UV-LEDs using Quaternary InAlGaN : Toward Shorter Wavelength and High-Efficiency Operation
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13-18
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Fabrication of GaInNP MQW-structure LED grown by a laser-assisted MOCVD
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19-22
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Development of near Ultra-Violet LED
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23-26
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White LEDs Based on III-V Nitrides
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27-31
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Epitaxial Growth of InN Films and InN Nano-Columns by RF-MBE
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33-37
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Novel Method for the Activation of Acceptor Dopant Introducing Localized Band by Isoelectronic Dopant
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39-42
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Reduction of Threading Dislocation in AlGaN with High Al Composition by Regrowth on Grooved Structure
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43-47
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Fabrication of GaN-based Surface Emitting Devices Using Laser Lift-Off Technique
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49-53
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Next Generation DVD and Requirements for Blue-Violet Laser
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55-59
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Fabrication of Nitride Semiconductor Vertical Microcavity LEDs and Prospects for Blue-Violet Vertical-Cavity Surface-Emitting Lasers
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61-66
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Blue-Violet Laser diodes on GaN Substrate
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67-72
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Structural Defects in Degraded GaN-based Semiconductor Laser Diodes
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73-76
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Violet laser diodes on GaN substrates with low aspect ratio
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77-80
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奥付
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複写される方へ
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