IEICE technical report. Component parts and materials The Institute of Electronics, Information and Communication Engineers 103(343) (20030925)

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Control of height and density of GaN nano-structure and its antireflection and enhanced transmission properties  Full Text: CiNii    1-5
UV light emitting device grown on AlGaN with low-dislocation density  Full Text: CiNii    7-12
Recent Progress of UV-LEDs using Quaternary InAlGaN : Toward Shorter Wavelength and High-Efficiency Operation  Full Text: CiNii    13-18
Fabrication of GaInNP MQW-structure LED grown by a laser-assisted MOCVD  Full Text: CiNii    19-22
Development of near Ultra-Violet LED  Full Text: CiNii    23-26
White LEDs Based on III-V Nitrides  Full Text: CiNii    27-31
Epitaxial Growth of InN Films and InN Nano-Columns by RF-MBE  Full Text: CiNii    33-37
Novel Method for the Activation of Acceptor Dopant Introducing Localized Band by Isoelectronic Dopant  Full Text: CiNii    39-42
Reduction of Threading Dislocation in AlGaN with High Al Composition by Regrowth on Grooved Structure  Full Text: CiNii    43-47
Fabrication of GaN-based Surface Emitting Devices Using Laser Lift-Off Technique  Full Text: CiNii    49-53
Next Generation DVD and Requirements for Blue-Violet Laser  Full Text: CiNii    55-59
Fabrication of Nitride Semiconductor Vertical Microcavity LEDs and Prospects for Blue-Violet Vertical-Cavity Surface-Emitting Lasers  Full Text: CiNii    61-66
Blue-Violet Laser diodes on GaN Substrate  Full Text: CiNii    67-72
Structural Defects in Degraded GaN-based Semiconductor Laser Diodes  Full Text: CiNii    73-76
Violet laser diodes on GaN substrates with low aspect ratio  Full Text: CiNii    77-80
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