IEICE technical report. Component parts and materials The Institute of Electronics, Information and Communication Engineers 99(379) (19991022)

 CiNii Books

表紙  Full Text: CiNii   
目次  Full Text: CiNii   
Selective Area Growth and Epitaxial Lateral Overgrowth of GaN  Full Text: CiNii    1-6
The assessment of radiative and nonradiative recombination process in ELO-GaN using spatial-time-resolved spectroscopy  Full Text: CiNii    7-13
Optical Recombination Processes in InGaN Quantum Wells on FIELO-GaN Substrates  Full Text: CiNii    15-20
Reduction of Etch Pit Density in GaN by Regrowth on Step Structure  Full Text: CiNii    21-27
Atomic force microscopy and transmission electron microscopy observations of KOH-etched GaN surfaces  Full Text: CiNii    29-34
Growth of GaN by MBE and Study on Excited Nitrogen Species  Full Text: CiNii    35-41
Intersuband transition in AlGaN/GaN multiple quantum wells  Full Text: CiNii    43-48
The characteristics of Pd ohmic electrode on p-type GaN  Full Text: CiNii    49-54
Ti/Al Ohmic Contact to n-type AlGaN/GaN Structure with Low Temperature Annealing  Full Text: CiNii    55-60
Characteristics of recessed gate AlGaN/GaN MODFETs on sapphire  Full Text: CiNii    61-66
Electrical Properties and I-V Characteristics in GaN-related Heterostructure FETs  Full Text: CiNii    67-74
[OTHERS]  Full Text: CiNii