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表紙
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目次
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Selective Area Growth and Epitaxial Lateral Overgrowth of GaN
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1-6
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The assessment of radiative and nonradiative recombination process in ELO-GaN using spatial-time-resolved spectroscopy
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7-13
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Optical Recombination Processes in InGaN Quantum Wells on FIELO-GaN Substrates
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15-20
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Reduction of Etch Pit Density in GaN by Regrowth on Step Structure
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21-27
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Atomic force microscopy and transmission electron microscopy observations of KOH-etched GaN surfaces
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29-34
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Growth of GaN by MBE and Study on Excited Nitrogen Species
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35-41
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Intersuband transition in AlGaN/GaN multiple quantum wells
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43-48
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The characteristics of Pd ohmic electrode on p-type GaN
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49-54
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Ti/Al Ohmic Contact to n-type AlGaN/GaN Structure with Low Temperature Annealing
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55-60
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Characteristics of recessed gate AlGaN/GaN MODFETs on sapphire
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61-66
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Electrical Properties and I-V Characteristics in GaN-related Heterostructure FETs
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67-74
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[OTHERS]
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