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表紙
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目次
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GaN Re-growth Using Ta Mask Which Etches Covering GaN Layer
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1-4
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HVPE Growth of {11-22} GaN Crystals on m-plane Sapphire Substrates
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5-8
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MOVPE growth and optical properties of AlGaN on AlN/sapphire
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9-12
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MBE growth of well-aligned InN crystals using Mo-mask selective area growth technique
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13-16
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High quality InN crystal growth by RF-MBE : Growth of position-controlled InN nanocolumns
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17-22
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Proposal of new growth method for high-quality InN and development on growth of InGaN
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23-27
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Exciton emission mechanism in AlN epitaxial films
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29-32
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High spatial resolution PL mapping of {11-22} InGaN quantum wells by a scanning near field optical microscope
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33-36
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Mapping of luminous intensity saturation in InGaN/GaN SQW studied by scanning near-field optical microscopy
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37-40
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Anisotropy in structural and optical properties of nonpolar group III nitrides grown on ZnO substrates
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41-44
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Theoretical Studies on the Characteristic Electronic Structures of In-Containint Nitride Semiconductors Based on the First Principles Calculations
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45-48
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Electrical and optical properties of polycrystalline Ga_xIn_<1-x>As thin films
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49-54
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Thermodynamic aspects of the raised pressure MOVPE for growth of GaInN
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55-58
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Ultraviolet AlGaN based multiple-quantum-well laser diodes
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59-62
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Reduction in operating voltage of UV laser diode
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63-67
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Fabrication of red, green and blue emitters using GaN-based UV Light-emitting diodes with Schottky-type structures
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69-72
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High Efficiency ultraviolet emitters by activation annealing in oxygen flow
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73-78
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Proposal of ultrathin InN-based asymmetric structure III-N QWs for novel photonic devices : Development from emitters into solar cells
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79-82
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GaN Photodetector with Nanostructure on Surface
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83-87
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AlN growth on period trench-patterned AlN/sapphire by Low-pressure HVPE
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89-92
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High rate growth of GaN using 4 inch×11 multi wafer MOVPE reactor (UR25K)
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93-96
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Characterization of quaternary InAlGaN/GaN HEMT epi-structures fabricated on 4inch diameter Si substrates
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97-101
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Variation of surface properties of Mg-doped GaN subjected to high-temperature annealing
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103-106
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Analysis of AlGaN/GaN HFET Current Collapse by Step Stress Measurement
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107-112
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Surface properties and deep electronic levels of AlGaN with high Al compositions
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113-116
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Aluminum-Free Ohmic contact on Si implanted nitride semiconductors
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117-121
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Low resistivity V/Al/Mo/Au ohmic contacts on AlGaN/GaN heterostructure
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123-126
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High breakdown voltage of AlGaN/GaN HEMTs on Si substrates
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127-130
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Large Current operation of GaN MOSFETs
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131-135
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50W at 5GHz RF output power performance of GaN-HEMT on Si substrate
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137-142
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Development of GaN Schottky Diodes for Microwave Wireless Ubiquitous Power Distribution
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143-148
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Output characteristics of AlGaN/GaN HEMTs at 60GHz frequency band
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149-153
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複写される方へ
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Notice for photocopying
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奥付
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