IEICE technical report. Microwaves The Institute of Electronics, Information and Communication Engineers 102(558) (20030109)

 CiNii Books

表紙  Full Text: CiNii   
目次  Full Text: CiNii   
Development of InP/InGaAs Single-Heterojunction Bipolar Transistor with High Uniformity and High Reliability  Full Text: CiNii    1-6
Fabrication Technology for Ultrahigh-Speed Decananometer-Gate InP-Based HEMTs  Full Text: CiNii    7-12
Ultra high-speed digital Ics using InP HEMTs  Full Text: CiNii    13-18
100-Gbit/s Logic IC using InP HEMTs  Full Text: CiNii    19-24
1.7-W 50-Gbit/s InP HEMT 4:1 Multiplexer IC with a Multi-phase Clock Architecture  Full Text: CiNii    25-30
Double-recessed 0.1-μm-gate InP-HEMTs for 40-Gb/s Optical Communication Systems  Full Text: CiNii    31-36
Monolithically Integrated Photoreceiver with Optical Waveguide for 100-Gbit/s Class OEIC  Full Text: CiNii    37-42
Flip-chip Distributed Amplifier with a bandwidth of 110 GHz  Full Text: CiNii    43-46
1.4-THz Gain-Bandwidth Product Preamplifier IC  Full Text: CiNii    47-52
A 60W AlGaN/GaN Heterojunction with a Field-Modulating Plate  Full Text: CiNii    53-57
Ka-band 2.3W Power AIGaN/GaN Heterojunction FET  Full Text: CiNii    59-64
Power Amplifier Module with Digital Adaptive Predistortion for Cellular Phone  Full Text: CiNii    65-72
A GSM//EDGE Dual-Mode, 900/1800/1900-MHz Triple-Band HBT-MMIC Power Amplifier Module  Full Text: CiNii    73-78
1.1W/mm High Power GaAs/InGaP Composite Channel FET with Asymmetrical LDD structure at 26V Operation  Full Text: CiNii    79-84
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