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表紙
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目次
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Development of InP/InGaAs Single-Heterojunction Bipolar Transistor with High Uniformity and High Reliability
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1-6
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Fabrication Technology for Ultrahigh-Speed Decananometer-Gate InP-Based HEMTs
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7-12
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Ultra high-speed digital Ics using InP HEMTs
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13-18
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100-Gbit/s Logic IC using InP HEMTs
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19-24
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1.7-W 50-Gbit/s InP HEMT 4:1 Multiplexer IC with a Multi-phase Clock Architecture
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25-30
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Double-recessed 0.1-μm-gate InP-HEMTs for 40-Gb/s Optical Communication Systems
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31-36
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Monolithically Integrated Photoreceiver with Optical Waveguide for 100-Gbit/s Class OEIC
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37-42
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Flip-chip Distributed Amplifier with a bandwidth of 110 GHz
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43-46
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1.4-THz Gain-Bandwidth Product Preamplifier IC
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47-52
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A 60W AlGaN/GaN Heterojunction with a Field-Modulating Plate
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53-57
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Ka-band 2.3W Power AIGaN/GaN Heterojunction FET
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59-64
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Power Amplifier Module with Digital Adaptive Predistortion for Cellular Phone
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65-72
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A GSM//EDGE Dual-Mode, 900/1800/1900-MHz Triple-Band HBT-MMIC Power Amplifier Module
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73-78
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1.1W/mm High Power GaAs/InGaP Composite Channel FET with Asymmetrical LDD structure at 26V Operation
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79-84
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複写される方へ
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奥付
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