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表紙
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目次
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Compact MOSFET Model and Its Perspective : from bulk-MOSFETs to MG-MOSFETs
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1-6
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2009 SISPAD Review
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7-11
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Report on 2009SISPAD (2)
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13-17
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Surface-Potential-Based Drain Current Model for Thin-Film Transistors
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19-22
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HiSIM-IGBT : A Compact IGBT Model for Circuit Simulation
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23-27
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Development of MEMS Equivalent Circuit Generator
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29-32
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Device Modeling and Simulation for CMOS Biosensor Applications
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33-37
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Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Transistors
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39-44
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R-matrix method for quantum transport simulation in atomistic modeling
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45-48
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Carrier Transport Analysis of Strained SiGe/Si-pMOSFETs using Full-band Device Simulation
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49-53
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A Novel Monte Carlo Simulation to Evaluate the Size Effect of Resistivity for Scaled Metallic Interconnects
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55-60
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Possible Performance of SOI Devices, their Potentiality and Prospects : Past Constraint and Current Issues
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61-66
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Random Fluctuations in Scaled MOS Devices
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67-71
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A Discrete Surface Potential Model which Accurately Reflects Channel Doping Profile and its Application to Ultra-Fast Analysis of Random Dopant Fluctuation
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73-78
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Atomic Scale Analysis of the Degradation Mechanism of the Integrity High-k/Metal-gate Interface Caused by the Interaction between Point-Defects and Residual Strain around the Interface
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79-84
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Trial application of tight-binding method to Si-cluster surrounded by SiO2 in optimized atomistic network
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85-90
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複写される方へ
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Notice for Photocopying
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奥付
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