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Technical report of IEICE. SDM The Institute of Electronics, Information and Communication Engineers 110(110) (20100623)

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Challenge for electromechanical logic systems using compound semiconductor heterostructures(Plenary Session 1) Full Text: CiNii	1-4
Nano-Electromechanical (NEM) Nonvolatile Memory for Low-Power Electronics(Session 1A : Emerging Device Technology 1) Full Text: CiNii	5-6
Dual-gate ZnO thin-film transistors with SiNx as Dielectric Layer(Session 1A : Emerging Device Technology 1) Full Text: CiNii	7-8
Piezoelectric material based passive RFID tags(Session 1A : Emerging Device Technology 1) Full Text: CiNii	9-10
Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors(Session 1A : Emerging Device Technology 1) Full Text: CiNii	11-13
Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1) Full Text: CiNii	15-19
Applications of Smart Cut^<TM> Technologies to III-V Based Engineered Substrates Full Text: CiNii	21-22
A New Cone-Type 1T DRAM Cell(Session 2A : Memory 1) Full Text: CiNii	23-25
Dependence of Ag film thickness on Formation of Ag Nano-crystals to Fabricate Polymer Nonvolatile Memory(Session 2A : Memory 1) Full Text: CiNii	27-30
The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1) Full Text: CiNii	31-36
Threshold Voltage Roll-off Mechanisms in SONOS Flash Memory in Retention Mode Including Trapped Charge Redistribution Effect(Session 2A : Memory 1) Full Text: CiNii	37-40
Vertical Organic Field Effect Transistors with an Additional Gate Insulation Structure between Active Layer and Gate Electrode(Session 3A : Emerging Device Technology 2) Full Text: CiNii	41-42
Investigation of n-type pentacene based MOS diodes with ultra-thin metal interface layer(Session 3A : Emerging Device Technology 2) Full Text: CiNii	43-46
Fundamental oscillations at 〜900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2) Full Text: CiNii	47-48
Analysis of low loss and wideband characteristics for monolithic isolators using resonant tunneling diodes(Session 3A : Emerging Device Technology 2) Full Text: CiNii	49-53
Investigation of Abnormal Drain Current Increase of Tunneling Field-Effect Transistors(Session 3A : Emerging Device Technology 2) Full Text: CiNii	55-56
A design of Novel IGBT with Oblique Trench Gate(Session 3A : Emerging Device Technology 2) Full Text: CiNii	57-59
Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects(Session 3A : Emerging Device Technology 2) Full Text: CiNii	61-63
Synthesis of wafer scale graphene layer for future electronic devices(Session 2B : Graphene and III-Vs) Full Text: CiNii	65-67
Graphene Channel FET : A New Candidate for High-Speed Devices(Session 2B : Graphene and III-Vs) Full Text: CiNii	69-72
Deoxyribonucleic Acid Sensitive Graphene Field-Effect Transistors(Session 2B : Graphene and III-Vs) Full Text: CiNii	73-74
Fabrication of InP/InGaAs DHBTs with buried SiO_2 wires(Session 2B : Graphene and III-Vs) Full Text: CiNii	75-79
Reliability study on the emitter-base junction for high-speed sub-micron InP HBTs(Session 2B : Graphene and III-Vs) Full Text: CiNii	81-84
Electrochemical formation of InP porous structures for their application to photoelectric conversion devices(Session 2B : Graphene and III-Vs) Full Text: CiNii	85-89
50-Gbit/s MUX/DEMUX IC modules using feed-trough type metal-wall package technique(Session 3B : High Speed and High Frequency Applications 1) Full Text: CiNii	91-96
94 GHz Monolithic Down-Converter for FMCW Radar Sensor using Metamorphic HEMTs(Session 3B : High Speed and High Frequency Applications 1) Full Text: CiNii	97-100
A Sub-Harmonic RF Transmitter Architecture with Simultaneous Power Combination and LO Leakage Cancellation(Session 3B : High Speed and High Frequency Applications 1) Full Text: CiNii	101-104
RF Interconnect Technology for On-Chip and Off-Chip Communication(Session 3B : High Speed and High Frequency Applications 1) Full Text: CiNii	105-108
Future perspective for the mainstream CMOS technology and their contribution to green technologies(Plenary Session 2) Full Text: CiNii	109-114
High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility(Session 4A : Channel Engineering) Full Text: CiNii	115-118
III-V/Ge CMOS technologies and heterogeneous integrations on Si platform(Session 4A : Channel Engineering) Full Text: CiNii	119-124
Stress and Surface Orientation Engineering in Scaled CMOSFETs Considering High-Field Carrier Transport(Session 4A : Channel Engineering) Full Text: CiNii	125-129
Si single-dopant devices and their characterization(Session 5A : Emerging Device Technology 3) Full Text: CiNii	131-136
Investigation on fabrication of nanoscale patterns using laser interference lithography(Session 5A : Emerging Device Technology 3) Full Text: CiNii	137-140
Bottom-up synthesis of metal-free elementary semiconductor nanowires(Session 5A : Emerging Device Technology 3) Full Text: CiNii	141-142
Fabrication of Oxide Thin Film Transistor based on SOG dielectric and solution ZnO(Session 6A : TFTs and Sensors) Full Text: CiNii	143-146
Device Simulation of Amorphous Indium-Gallium-Zinc-Oxide Thin Film transistors with various interfacial Dielectric layers(Session 6A : TFTs and Sensors) Full Text: CiNii	147-148
Acivation behaviour for doped Si films after laser or furnace annealing(Session 6A : TFTs and Sensors) Full Text: CiNii	149-153
Strain effects in resistor stress sensor fabricated on (001) silicon and their influences on the determination of piezoresistive coefficients(Session 6A : TFTs and Sensors) Full Text: CiNii	155-160
Fabrication of gas sensor using Pd doped SnO_2 nanofibers(Session 6A : TFTs and Sensors) Full Text: CiNii	161-162
Analysis of Transfer Gate in CMOS Image Sensor(Session 6A : TFTs and Sensors) Full Text: CiNii	163-164
Interaction of bis-diethylaminosilane with a hydroxylized Si (001) surface for SiO_2 thin-film growth using density functional theory(Session 7A : Gate Oxides) Full Text: CiNii	165-168
Electrical and structural properties of metal oxide semiconductor (MOS) devices with Pt/Ta_2O_5 gate stacks(Session 7A : Gate Oxides) Full Text: CiNii	169-172
Modulation of PtSi work function by alloying with low work function metal(Session 7A : Gate Oxides) Full Text: CiNii	173-176
The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter(Session 7A : Gate Oxides) Full Text: CiNii	177-182
High Integrity Gate Insulator Films on Atomically Flat Silicon Surface(Session 7A : Gate Oxides) Full Text: CiNii	183-188
Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides) Full Text: CiNii	189-194
Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET(Session 7A : Gate Oxides) Full Text: CiNii	195-198
High-k materials and poly-Si nanowires in nonvolatile memory for 3D flash memory and display panel applications(Session 8A : Memory 2) Full Text: CiNii	199-204
A Single Element Phase Change Memory(Session 8A : Memory 2) Full Text: CiNii	205-209
Impact of Floating Body type DRAM with the Vertical MOSFET(Session 8A : Memory 2) Full Text: CiNii	211-216
Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect(Session 8A : Memory 2) Full Text: CiNii	217-220
Theoretical Study of the Hydrogen Effect on the Program/Erase Cycle of MONOS-Type Memories(Session 8A : Memory 2) Full Text: CiNii	221-224
The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure.(Session 8A : Memory 2) Full Text: CiNii	225-230
New Method for Evaluating the Scaling Trend of Nano-Electro-Mechanical (NEM) Nonvolatile Memory Cells(Session 8A : Memory 2) Full Text: CiNii	231-232
Development of Low on-resistance SiC Trench MOSFET and other SiC power devices(Session 6B : Wide Bandgap Materials and Devices, Power Devices) Full Text: CiNii	233-236
Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors(Session 6B : Wide Bandgap Materials and Devices, Power Devices) Full Text: CiNii	237-240
InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices) Full Text: CiNii	241-244
A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices) Full Text: CiNii	245-248
Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices) Full Text: CiNii	249-252
Characteristics of GaN p-n diode with damage layer induced by ICP plasma process(Session 6B : Wide Bandgap Materials and Devices, Power Devices) Full Text: CiNii	253-256
The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation(Session 7B : Si IC and Circuit Technology) Full Text: CiNii	257-262
Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation(Session 7B : Si IC and Circuit Technology) Full Text: CiNii	263-267
A Non-snapback NMOS ESD Clamp Circuit using Gate-Coupled Scheme with Isolated Well in a Bipolar-CMOS-DMOS Process(Session 7B : Si IC and Circuit Technology) Full Text: CiNii	269-274
A Precision Floating-Gate Mismatch Measurement Technique for Analog Application(Session 7B : Si IC and Circuit Technology) Full Text: CiNii	275-278
A Physical-Based Modeling for Accurate Wide-Width LDMOS(Session 7B : Si IC and Circuit Technology) Full Text: CiNii	279-282
Over 1GHz High-Speed Current Pulse Generation Circuit for Novel Nonvolatile Memory Cells(Session 7B : Si IC and Circuit Technology) Full Text: CiNii	283-288
A V-band Common-Source Low Noise Amplifier in a 0.13 μm RFCMOS Technology(Session 8B : High Speed and High Frequency Applications 2) Full Text: CiNii	289-292
A 0.18 μm CMOS process 10-PAM transceiver for 10 Gigabit Ethernet(Session 8B : High Speed and High Frequency Applications 2) Full Text: CiNii	293-296
A Switched-Capacitor Integrator Using Dynamic Source-Follower Amplifiers(Session 8B : High Speed and High Frequency Applications 2) Full Text: CiNii	297-300
A Basic Study on RF Characteristics of Short Wavelength Comb-type Capacitive Transmission Line on MMIC(Session 8B : High Speed and High Frequency Applications 2) Full Text: CiNii	301-302
High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics) Full Text: CiNii	303-308
Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET(Session 9B : Nano-Scale devices and Physics) Full Text: CiNii	309-313
Characteristic of Dual-Gate Single Electron Transistor (DG-SET) with extended channel using shallow doping and sidewall patterning for suppressing MOS current(Session 9B : Nano-Scale devices and Physics) Full Text: CiNii	315-318
Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics) Full Text: CiNii	319-324
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