検索結果125件中 1-20 を表示

  • Iwaya Motoaki ID: 9000047210495

    CiNii収録論文: 1件

    • Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy (2006)
  • Iwaya Motoaki ID: 9000047210505

    CiNii収録論文: 1件

    • Anisotropically Biaxial Strain ina-Plane AlGaN on GaN Grown onr-Plane Sapphire (2006)
  • Iwaya Motoaki ID: 9000048796022

    CiNii収録論文: 1件

    • Activation of Mg-Doped p-Type Al0.17Ga0.83N in Oxygen Ambient (2009)
  • Iwaya Motoaki ID: 9000052058286

    CiNii収録論文: 1件

    • AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage (2011)
  • Iwaya Motoaki ID: 9000076230479

    CiNii収録論文: 1件

    • Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes (2011)
  • Iwaya Motoaki ID: 9000082850104

    CiNii収録論文: 1件

    • High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio (2006)
  • IWAYA Motoaki ID: 9000107313627

    Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University (2007年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy (2007)
  • IWAYA Motoaki ID: 9000107338116

    Department of Materials Science and Engineering, Meijo University (2011年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Microstructures of GaInN/GaInN Superlattices on GaN Substrates (2011)
  • IWAYA Motoaki ID: 9000107338228

    Faculty of Science and Technology, Meijo University (2011年 CiNii収録論文より)

    CiNii収録論文: 1件

    • GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate (2011)
  • IWAYA Motoaki ID: 9000107341734

    Faculty of Science and Technology, 21st Century-COE "Nano-Factory", Meijo University (2005年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Impact of H_2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer (2005)
  • IWAYA Motoaki ID: 9000107347539

    Faculty of Science and Technology, High-Tech Research Center (2004年 CiNii収録論文より)

    CiNii収録論文: 1件

    • 350.9nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN (2004)
  • IWAYA Motoaki ID: 9000107361227

    Faculty of Science and Technology, Meijo University (2010年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate (2010)
  • IWAYA Motoaki ID: 9000107366136

    Faculty of Science and Technology, Meijo University (2012年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Correlation between Device Performance and Defects in GalnN-Based Solar Cells (2012)
  • IWAYA Motoaki ID: 9000107376239

    Faculty of Science and Technology, Meijo University (2011年 CiNii収録論文より)

    CiNii収録論文: 1件

    • AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates (2011)
  • Iwaya Motoaki ID: 9000258140834

    Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468–8502, Japan (1998年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN. (1998)
  • Iwaya Motoaki ID: 9000258150197

    Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan (2000年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Performance of GaN-Based Semiconductor Laser with Spectral Broadening due to Compositional Inhomogeneity in GaInN Active Layer. (2000)
  • Iwaya Motoaki ID: 9000258155770

    Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan (2001年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Fracture of AlxGa1-xN/GaN Heterostructure. Compositional and Impurity Dependence. (2001)
  • Iwaya Motoaki ID: 9000258156718

    High-Tech Research Center, Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan (2001年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer. (2001)
  • Iwaya Motoaki ID: 9000258172237

    Faculty of Science and Technology, High-Tech Research Center, 21st-Century COE Program “Nano Factory”, Meijo University (2004年 CiNii収録論文より)

    CiNii収録論文: 1件

    • 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN (2004)
  • Iwaya Motoaki ID: 9000258181518

    Faculty of Science and Technology, 21st-Century COE Program “Nano-Factory”, Meijo University (2005年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate (2005)
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