検索結果125件中 21-40 を表示

  • Iwaya Motoaki ID: 9000258182613

    Faculty of Science and Technology, 21st Century-COE “Nano-Factory”, Meijo University (2005年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Impact of H2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer (2005)
  • Iwaya Motoaki ID: 9000283193994

    Department of Materials Science and Engineering, 21st-Century COE Program “Nano Factory”, Meijo University (2005年 CiNii収録論文より)

    CiNii収録論文: 1件

    • High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure (2005)
  • Iwaya Motoaki ID: 9000283194001

    Faculty of Science and Technology, 21st-Century COE Program “Nano-Factory”, Meijo University (2005年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Flat (1120) GaN Thin Film on Precisely Offset-Controlled (1102) Sapphire Substrate (2005)
  • Iwaya Motoaki ID: 9000401566129

    CiNii収録論文: 1件

    • Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown onm-Plane GaN (2009)
  • Iwaya Motoaki ID: 9000401566372

    CiNii収録論文: 1件

    • Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thickm-Plane GaInN Underlying Layer on Grooved GaN (2009)
  • Iwaya Motoaki ID: 9000401568183

    CiNii収録論文: 1件

    • Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes (2010)
  • Iwaya Motoaki ID: 9000401568502

    CiNii収録論文: 1件

    • Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy (2010)
  • Iwaya Motoaki ID: 9000401569156

    CiNii収録論文: 1件

    • Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate (2010)
  • Iwaya Motoaki ID: 9000401569173

    CiNii収録論文: 1件

    • Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates (2010)
  • Iwaya Motoaki ID: 9000401569685

    CiNii収録論文: 1件

    • Microstructures of GaInN/GaInN Superlattices on GaN Substrates (2010)
  • Iwaya Motoaki ID: 9000401570359

    CiNii収録論文: 1件

    • Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells (2011)
  • Iwaya Motoaki ID: 9000401570707

    CiNii収録論文: 1件

    • Nonpolara-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate (2011)
  • Iwaya Motoaki ID: 9000401571220

    CiNii収録論文: 1件

    • AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates (2011)
  • Iwaya Motoaki ID: 9000401573619

    CiNii収録論文: 1件

    • Correlation between Device Performance and Defects in GaInN-Based Solar Cells (2012)
  • Iwaya Motoaki ID: 9000401677242

    CiNii収録論文: 1件

    • Stress and Defect Control in GaN Using Low Temperature Interlayers (1998)
  • Iwaya Motoaki ID: 9000401677500

    CiNii収録論文: 1件

    • Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN (1998)
  • Iwaya Motoaki ID: 9000401685881

    CiNii収録論文: 1件

    • Microscopic Investigation of Al0.43Ga0.57N on Sapphire (1999)
  • Iwaya Motoaki ID: 9000401686477

    CiNii収録論文: 1件

    • Low-Intensity Ultraviolet Photodetectors Based on AlGaN (1999)
  • Iwaya Motoaki ID: 9000401690099

    CiNii収録論文: 1件

    • Performance of GaN-Based Semiconductor Laser with Spectral Broadening due to Compositional Inhomogeneity in GaInN Active Layer (2000)
  • Iwaya Motoaki ID: 9000401692576

    CiNii収録論文: 1件

    • Electrical Conductivity of Low-Temperature-Deposited Al0.1Ga0.9N Interlayer (2000)
ページトップへ