検索結果10件中 1-10 を表示

  • KOTSUJI Setsu ID: 9000002166283

    System Devices Research Laboratories, NEC Corporation (2004年 CiNii収録論文より)

    CiNii収録論文: 2件

    • Influences of Traps within HfSiON Bulk on Positive- and Negative-Bias Temperature Instability of HfSiON Gate Stacks (2004)
    • Breakdown Mechanisms and Lifetime Prediction for 90nm-node Low-power HfSiON/SiO_2 CMOSFETs (2004)
  • KOTSUJI Setsu ID: 9000107344133

    System Devices Research Laboratories, NEC Corporation (2005年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO_2 CMOSFETs (2005)
  • KOTSUJI Setsu ID: 9000107344265

    System Devices Research Laboratories, NEC Corporation (2005年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks (2005)
  • Kotsuji Setsu ID: 9000258181102

    System Devices Research Laboratories, NEC Corporation (2005年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks (2005)
  • Kotsuji Setsu ID: 9000258181158

    System Devices Research Laboratories, NEC Corporation (2005年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO2 CMOSFETs (2005)
  • Kotsuji Setsu ID: 9000401735822

    CiNii収録論文: 1件

    • Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks (2005)
  • Kotsuji Setsu ID: 9000401735905

    CiNii収録論文: 1件

    • Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO2CMOSFETs (2005)
  • Kotsuji Setsu ID: 9000401786783

    CiNii収録論文: 1件

    • Physical Model for Reset State of Ta2O5/TiO2-Stacked Resistance Random Access Memory (2010)
  • Kotsuji Setsu ID: 9000025016611

    CiNii収録論文: 1件

    • Physical model for reset state of Ta2O5/TiO2-stacked resistance random access memory (Special issue: Solid state devices and materials) (2010)
  • 小辻 節 ID: 9000006394477

    日本電気(株)システムデバイス研究所 (2007年 CiNii収録論文より)

    CiNii収録論文: 1件

    • 不純物トラップメモリによる電荷の面内再分配抑制と高温保持力向上 (2007)
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