検索結果11件中 1-11 を表示

  • KASHIHARA Keiichiro ID: 9000107389139

    LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technology Corp. (2004年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Pt/Ba_xSr_<(1-x)>TiO_3/Pt Capacitor Technology for 0.15μm Embedded Dynamic Random Access Memory (2004)
  • Kashihara Keiichiro ID: 9000258172344

    LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technology Corp. (2004年 CiNii収録論文より)

    CiNii収録論文: 1件

    • Pt/BaxSr(1-x)TiO3/Pt Capacitor Technology for 0.15 .MU.m Embedded Dynamic Random Access Memory (2004)
  • Kashihara Keiichiro ID: 9000401725556

    CiNii収録論文: 1件

    • Pt/BaxSr(1-x)TiO3/Pt Capacitor Technology for 0.15 µm Embedded Dynamic Random Access Memory (2004)
  • Kashihara Keiichiro ID: 9000401780076

    CiNii収録論文: 1件

    • Anomalous Nickel Silicide Encroachment in n-Channel Metal–Oxide–Semiconductor Field-Effect Transitors on Si(110) Substrates and Its Suppression by Si+Ion-Implantation Technique (2009)
  • Kashihara Keiichiro ID: 9000401786395

    CiNii収録論文: 1件

    • Three-Dimensional Visualization Technique for Crystal Defects in High Performance p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Embedded SiGe Source/Drain (2010)
  • Kashihara Keiichiro ID: 9000401792778

    CiNii収録論文: 1件

    • Characterizations of NiSi2-Whisker Defects in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with <110> Channel on Si(100) (2010)
  • Kashihara Keiichiro ID: 9000402020247

    CiNii収録論文: 1件

    • Study of formation mechanism of nickel silicide discontinuities in high-performance complementary metal–oxide–semiconductor devices (2014)
  • Kashihara Keiichiro ID: 9000025057447

    CiNii収録論文: 1件

    • Anomalous nickel silicide encroachment in n-channel metal-oxide-semiconductor field-effect transistors on Si(110) substrates and its suppression by Si[+] ion-implantation technique (2009)
  • Kashihara Keiichiro ID: 9000025071653

    CiNii収録論文: 1件

    • Characterizations of NiSi2-whisker defects in n-channel metal-oxide-semiconductor field-effect transistors with <110> channel on Si(100) (2010)
  • Kashihara Keiichiro ID: 9000025127046

    CiNii収録論文: 1件

    • Narrow line effect of nickel silicide on p[+] active lines and its suppression by fluorine ion implantation (2008)
  • 柏原 慶一朗 ID: 9000004967314

    (株)ルネサステクノロジ (2007年 CiNii収録論文より)

    CiNii収録論文: 10件

    • 電極構造が高誘電体キャパシタの電気的特性に与える影響 (1999)
    • BSTキャパシタに対するポストアニールの影響 (1999)
    • BSTキャパシタにおける成膜時及びポスト処理時酸化性の影響 (1999)
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