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  • NAKATSUJI Kan ID: 9000238256649

    Department of Materials Science & Engineering, Tokyo Institute of Technology (2012 from CiNii)

    Articles in CiNii:1

    • Electronic States at Surfaces (2012)
  • NAKATSUJI Kan ID: 9000398394004

    Department of Materials Science and Engineering, Tokyo Institute of Technology (2018 from CiNii)

    Articles in CiNii:1

    • Interface Induced STM Image at Ultrathin Ag(111) Films on Si(111)√3×√3-B Substrates (2018)
  • Nakatsuji K. ID: 9000003210080

    Faculty of Engineering, Kyushu Univ. (2016 from CiNii)

    Articles in CiNii:181

    • Control of the Surface Superstructures on the Ge(001) Clean Surface (2005)
    • Lattice Strain and Related Phenomena on Metal Surfaces (2008)
    • Electron Transport Control by Electron and Hole Injection from a STM Tip (2008)
  • Nakatsuji K. ID: 9000239571560

    Tokyo Tech. (2012 from CiNii)

    Articles in CiNii:1

    • 19aFE-5 Epitaxial Growth of Silicene onn Ultra-thin Ag films (2012)
  • Nakatsuji K. ID: 9000241174760

    Tokyo Tech. (2013 from CiNii)

    Articles in CiNii:1

    • 27aXK-4 Electronic states of epitaxial silicene (2013)
  • Nakatsuji K. ID: 9000243743710

    Tokyo Tech. (2013 from CiNii)

    Articles in CiNii:1

    • Ripples on ultra-thin Ag(111) films at Si(111)7×7 substrates (2013)
  • Nakatsuji K. ID: 9000243743758

    Dep. of Materials Sci. and Eng., Tokyo Institute of Technology (2013 from CiNii)

    Articles in CiNii:1

    • Hydrogen adsorption at the interface between Ag thin film and Si(111) substrate (2013)
  • Nakatsuji K. ID: 9000264252543

    Tokyo Tech. (2014 from CiNii)

    Articles in CiNii:1

    • 27pAP-3 A periodic structure at the surfaces of Ag ultra-thin-films grown on the Si(111) 7x7 substrates (2014)
  • Nakatsuji K. ID: 9000277503332

    Tokyo Tech. (2014 from CiNii)

    Articles in CiNii:1

    • 9pPSA-110 A periodic structure at the surfaces of Ag ultra-thin films grown on the Si(111)7x7 substrates (2) (2014)
  • Nakatsuji K. ID: 9000277510421

    Tokyo Tech. (2014 from CiNii)

    Articles in CiNii:1

    • 9pPSA-107 Structure and growth of Bi(110) ultra thin films on Si(111)√3x√3-B surfaces (2014)
  • Nakatsuji K. ID: 9000312840876

    Tokyo Tech. (2015 from CiNii)

    Articles in CiNii:1

    • 21aAB-7 A periodic structure at the surfaces of Ag ultra-thin-films grown on the Si(111) √<3>x√<3>-B substrates (3) (2015)
  • Nakatsuji K. ID: 9000312841344

    Department of Materials Science and Engineering, Tokyo Institute of Technology (2015 from CiNii)

    Articles in CiNii:1

    • 22aAE-5 Growth of Silicon on Epitaxial Graphene on 6H-SiC(0001) (2015)
  • Nakatsuji K. ID: 9000312841495

    Tokyo Tech. (2015 from CiNii)

    Articles in CiNii:1

    • 24aAE-2 Structure and growth of Bi(110) ultra-thin films on Si(111)√<3>x√<3>-B surfaces (2) (2015)
  • Nakatsuji K. ID: 9000322091458

    Dep. of Material Sci. and Eng., Tokyo Institute of Technology (2016 from CiNii)

    Articles in CiNii:3

    • 16pCA-4 Angle resolved photoelectron spectroscopy on graphene on the nanofacets on the vicinal SiC(0001) surfaces (2015)
    • 16aAG-10 Electron Transport in Graphene Nanoribbons Placed on a Corrugated SiC Surface (2015)
    • 22aAJ-4 Atomic and electronic structures of graphene on the nanofacets formed on vicinal SiC(0001) substrates (2016)
  • Nakatsuji K. ID: 9000322091686

    Dept. of Materials Science & Engineering. Tokyo Tech (2015 from CiNii)

    Articles in CiNii:1

    • 18aPS-5 Electronic Structure of Ultra-thin Bi (110) Films on Si (111) √3×√3-B Substrates (2015)
  • Nakatsuji K. ID: 9000322091741

    Tokyo Tech. (2015 from CiNii)

    Articles in CiNii:1

    • 18aPS-19 A novel reconstruction at Bi(110) islands on Si(111)√3x√3-B substrates (2015)
  • Nakatsuji K. ID: 9000331908362

    Dept. of Materials Science & Engineering. Tokyo Tech (2016 from CiNii)

    Articles in CiNii:1

    • 19aAJ-3 Electronic Structure of Ultra-thin Bi (110) Films on Si (111) √<3>×√<3-B> Substrates II (2016)
  • Nakatsuji K. ID: 9000331908829

    Tokyo Tech. (2016 from CiNii)

    Articles in CiNii:1

    • 19pPSA-59 An X-ray structure analysis for Si(111)√<3>x√<3-B> surface (2016)
  • Nakatsuji K. ID: 9000376935916

    Dep. of Material Sci. and Eng., Tokyo Institute of Technology (2016 from CiNii)

    Articles in CiNii:1

    • Electronic States on graphene on the nanofacets on the vicinal 6H-SiC(0001) surfaces (2016)
  • Nakatsuji K. ID: 9000388524904

    Dep. of Material Sci. and Eng., Tokyo Institute of Technology (2017 from CiNii)

    Articles in CiNii:1

    • Electronic states of graphene on the nanofacets on the vicinal 6H-SiC(0001) surfaces II (2017)
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