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  • YAGISHITA A. ID: 9000004781319

    Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company (2008 from CiNii)

    Articles in CiNii:16

    • Process Integration Technology and Device Characteristics of CMOS FinFET on Bulk Silicon Substrate with sub-10nm Fin Width and 20nm Gate Length (2006)
    • Metal Gate Technology for High-Performance Transistors (新しい地球環境と豊かなネットワーク社会を生み出す半導体技術) -- (セッション8 先端デバイス技術--限りなき微細化・高機能化への挑戦) (1999)
    • 不純物偏析ショットキー接合トランジスタ (2004)
  • YAGISHITA Atsushi ID: 9000014440689

    Semiconductor Company, Toshiba (2003 from CiNii)

    Articles in CiNii:2

    • Impact of Impurity Fluctuation on Transport between metal and semiconductor (2003)
    • Impact of Impurity Fluctuation on Transport between metal and semiconductor (2003)
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