Search Results1-15 of  15

  • 内田 建 ID: 9000001962611

    "OYO BUTURI" Editorial Committee (2005 from CiNii)

    Articles in CiNii:1

    • Frontier of high resolution surface spectroscopy (2005)
  • 内田 建 ID: 9000015961476

    Articles in CiNii:1

    • 最新開発事例 単一電子デバイスの開発と応用 (特集 ナノエレクトロデバイスの課題と可能性) (2003)
  • 内田 建 ID: 9000333083706

    Articles in CiNii:1

    • Thermal-Aware Design of Nanoscale Semiconductor Devices (2016)
  • 内田 建 ID: 9000399247879

    Articles in CiNii:1

    • Development and Education of Electronic Devices Aided by Computer Simulation (2018)
  • UCHIDA Ken ID: 9000002118881

    Advanced LSI Technology Laboratory, Toshiba Corporation (2008 from CiNii)

    Articles in CiNii:1

    • Stress Engineering for High-Performance MOSFETs (2008)
  • UCHIDA Ken ID: 9000004746093

    Keio University (2013 from CiNii)

    Articles in CiNii:29

    • シリコン5原子層のトランジスタ開発 (2004)
    • Stress Engineering in (100) and (110) MOSFETs (2009)
    • ショットキーソース/ドレインMOSFETにおけるソースサイドホットエレクトロン生成効率の向上 (2001)
  • UCHIDA Ken ID: 9000017444211

    Department of Physical Electronics, Tokyo Institute of Technology (2012 from CiNii)

    Articles in CiNii:5

    • Properties of impurities in semiconductors (2010)
    • Carriers from impurities in semiconductors and carriers in inversion-layer of MOS structures (2010)
    • CT-2-1 Stress Engineering for High-performance CMOSFETs (2010)
  • UCHIDA Ken ID: 9000107322812

    Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation (2008 from CiNii)

    Articles in CiNii:1

    • Inversion-Layer Capacitance and Low-Field Mobility Characteristics in Si(110) pMOSFETs (2008)
  • UCHIDA Ken ID: 9000107359144

    Department of Physical Electronics, Tokyo Institute of Technology (2012 from CiNii)

    Articles in CiNii:1

    • Study of source charging time in InGaAs MOSFET (2012)
  • UCHIDA Ken ID: 9000107359374

    Department of Physical Electronics, Tokyo Institute of Technology (2012 from CiNii)

    Articles in CiNii:1

    • Study of source charging time in InGaAs MOSFET (2012)
  • UCHIDA Ken ID: 9000397672564

    Department of Electronics and Electrical Engineering, Keio University (2018 from CiNii)

    Articles in CiNii:1

    • Metal-Oxide-Semiconductor Gas Sensor Array Toward Artificial Olfaction (2018)
  • UCHIDA Ken ID: 9000404509613

    Department of Electrical and Electronics Engineering, Keio University (2014 from CiNii)

    Articles in CiNii:1

    • Carrier transport and thermal-aware device design of silicon nanoscale devices (2014)
  • Uchida K. ID: 9000237748059

    Tokyo Tech (2012 from CiNii)

    Articles in CiNii:1

    • 24aBJ-9 Charge sensing using silicon quantum dots (2012)
  • Uchida K ID: 9000003524237

    Articles in CiNii:2

    • マイクロマシニングによる微小引っ張り破断試験機の試作 (1994)
    • 28a-P-8 The spatial variation of STM tunneling current noise (1994)
  • Uchida Ken ID: 9000242894244

    Department of Electrical and Electronics Engineering, Keio University (2013 from CiNii)

    Articles in CiNii:1

    • Carrier Transport in Nanoscale MOSFETs (2013)
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