Search Results1-10 of  10

  • 前川 繁登 ID: 9000003403212

    神戸大工 (1981 from CiNii)

    Articles in CiNii:2

    • 4a-B-7 GaSe_<1-x>S_x混晶のブリルアン散乱II (1980)
    • 2a-NL-10 GaSe_<1-x>Se混晶のブリルアン散乱 III (1981)
  • 前川 繁登 ID: 9000008209313

    Articles in CiNii:1

    • デバイスの高速化,低消費電力化を実現するSOIの最新技術動向 (特集 デバイスの高速化、低消費電力化を実現するSOIウェハ) (1999)
  • MAEGAWA Shigeto ID: 9000005104588

    Renesas Technology Corporation (2005 from CiNii)

    Articles in CiNii:3

    • Recovery of Silicon by Coherent Phonon Excited by Free Electron Laser Irradiation (2005)
    • Bootstrap Pass-Transistor Logic with Active Body-Biasing Control on PD-SOI (2005)
    • High Performance CMOS Circuit by Using Charge Recycling Actively Body-bias Controlled SOI (2005)
  • MAEGAWA Shigeto ID: 9000240236402

    Mixed Signal Device Tech. Dept. Renesas Electronics Corp.Advanced LSI Devices Research Renesas Electronics Corp. (2013 from CiNii)

    Articles in CiNii:5

    • Necessity of Pulse Hot Carrier Evaluation in Suppressing Self-Heating Effect for SOI Smart Power (2009)
    • Enhancement of Current Drivability in Field PMOS by Optimized Field Plate (2010)
    • Enhancement of Current Drivability in Field PMOS by Optimized Field Plate (2010)
  • MAEGAWA Shigeto ID: 9000250202245

    Renesas Technology Corp. (2006 from CiNii)

    Articles in CiNii:27

    • Issue of SOI MOS Transistor and its Improvement (2001)
    • Impact of Actively Body-bias Controlled (ABC) SOI SRAM for Low-Voltage and High-Speed Operation (2004)
    • 0.35μm Large-Scale SOI Gate Array using Field Shield Isolation Technology (1997)
  • MAEGAWA Shigeto ID: 9000257902156

    Renesas Technology Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Recovery of Silicon by Coherent Phonon Excited by Free Electron Laser Irradiation (2005)
  • Macgawa Shigeto ID: 9000391549226

    Mitsubishi Electric Corporation (2001 from CiNii)

    Articles in CiNii:1

    • Issue of SOI MOS Transistor and its Improvement (2001)
  • Maegawa S. ID: 9000398969559

    Articles in CiNii:1

    • 3-15 Brillouin Scattering in Layered Semiconductors by using Microprocessor-controlled Fabry-Perot Interferometer (1980)
  • Maegawa Shigeto ID: 9000004968385

    Renesas (2004 from CiNii)

    Articles in CiNii:6

    • Quality evaluation of SOI materials and technological issues to be solved (2000)
    • How Do We Lower the Power of CMOS Circuits in Advanced Technologies? (2004)
    • How Do We Lower the Power of CMOS Circuits in Advanced Technologies? (2004)
  • Maegawa Shigeto ID: 9000021735595

    Articles in CiNii:1

    • A 1 inch Format 1.5M Pixel IT-CCD Image Sensor for an HDTV Camera System. (1993)
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