Search Results1-20 of  25

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  • 坂本 邦博 ID: 9000404159134

    Articles in CiNii:1

    • Study of SiC Device for Pulsed Power Switching Circuit (2019)
  • 坂本 邦博 ID: 9000404507337

    産総研 (2010 from CiNii)

    Articles in CiNii:1

    • Silicon technology (2010)
  • 坂本 邦博 ID: 9000404809419

    Articles in CiNii:1

    • Electrical Characteristics of 3.3 kV SiC-MOSFET and Development of Inductive Energy Storage Pulsed Power Generator (2019)
  • 坂本 邦博 ID: 9000004339712

    東大・工 (1981 from CiNii)

    Articles in CiNii:1

    • As-Se系,As-Sb-Se系を溶媒とするZnSeの溶液成長 : 無機材料 (1981)
  • 坂本 邦博 ID: 9000008220318

    Articles in CiNii:1

    • 太陽電池を作ってみよう (1999)
  • 坂本 邦博 ID: 9000009729353

    Articles in CiNii:3

    • シリコン微細素子のための選択成長技術 (2002)
    • ソース/ドレイン先行プロセスによる自己整合二重ゲートトランジスタの試作 (2004)
    • Analysis of a double-gate MOSFET between a tied double-gate operation and a separated-gate variable-threshold operation (2007)
  • 坂本 邦博 ID: 9000017392091

    産総研 (2010 from CiNii)

    Articles in CiNii:1

    • Silicon technology (2010)
  • 坂本 邦博 ID: 9000018351400

    Articles in CiNii:1

    • サ-ファクタントエピタキシ- (表面エレクトロニクスに関する調査報告) -- (界面形成と結晶成長) (1996)
  • 坂本 邦博 ID: 9000020136785

    電子技術総合研究所 (1991 from CiNii)

    Articles in CiNii:1

    • Si/Ge歪超格子結晶の微構造と歪の電子顕微鏡観察 (1991)
  • 坂本 邦博 ID: 9000398998564

    Articles in CiNii:1

    • Evaluation of electrical characteristics of 13 kV class SiC-MOSFET and development of inductive energy storage pulsed power generator (2018)
  • 坂本 邦博 ID: 9000398998741

    Articles in CiNii:1

    • Evaluation of electrical characteristics of 13 kV class SiC-MOSFET and development of inductive energy storage pulsed power generator (2018)
  • 坂本 邦博 ID: 9000404518675

    Articles in CiNii:1

    • 20190930 (1987)
  • 坂本 邦博 ID: 9000404524978

    Articles in CiNii:1

    • A High-Power Miniaturized Wireless EV Charger with a New SiC-VMOSFET driven Single-Ended Inverter (2019)
  • 坂本 邦博 ID: 9000404525095

    Articles in CiNii:1

    • A High-Power Miniaturized Wireless EV Charger with a New SiC-VMOSFET driven Single-Ended Inverter (2019)
  • 坂本 邦博 ID: 9000404636305

    産業技術総合研究所 (2018 from CiNii)

    Articles in CiNii:1

    • 20191009 (2018)
  • SAKAMOTO Kunihiro ID: 9000006344975

    New Energy & Industrial Tech. Development Org. (NEDO):(Present address)Nanoelectronics Research Institute, AIST (2007 from CiNii)

    Articles in CiNii:1

    • A review of IEDM 2006 (2007)
  • SAKAMOTO Kunihiro ID: 9000006930571

    Nanoelectronics Research Institute, National Institute of AIST (2012 from CiNii)

    Articles in CiNii:10

    • Static Noise Margin Enhancement by Flex-Pass-Gate SRAM (2008)
    • Integration of Vertical Multi-Gate Devices (2010)
    • Variability Analysis for Metal-Gate FinFETs Using Compact Model (2009)
  • SAKAMOTO Kunihiro ID: 9000020023521

    電子技術総合研究所 (1993 from CiNii)

    Articles in CiNii:1

    • Microstructure and Optical Properties of Si/Ge Strained-Layer Superlattice. (1993)
  • SAKAMOTO Kunihiro ID: 9000253649438

    Electrotechnical Laboratory (ETL) (1998 from CiNii)

    Articles in CiNii:1

    • Spatially Controlled Formation of an Atomically Flat Si(001) Surface by DC Annealing. (1998)
  • Sakamoto K. ID: 9000003378945

    Electrotechnical Laboratory (2000 from CiNii)

    Articles in CiNii:32

    • Reflection High-Energy Electron Diffraction (RHEED) and Epitaxial Growth (1995)
    • Electrical Characteristics of Au/n-Ge Schottky Barrier Diode Grown on Si Substrate (2000)
    • Microstructure study of Bi-wire formed Si surface (2000)
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