Search Results1-20 of  96

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  • 垣内 弘章 ID: 9000258635899

    大阪大学 大学院工学研究科精密科学専攻 (2003 from CiNii)

    Articles in CiNii:1

    • Deposition of Silicon Nitride Film by Atmospheric Pressure Plasma CVD-Effect of H2- (2003)
  • 垣内 弘章 ID: 9000258637234

    大阪大学 大学院工学研究科 (2004 from CiNii)

    Articles in CiNii:1

    • Hige-Rate Deposition of SiNx films by Atmospheric Pressure Plasma CVD -Optical Emission Spectroscopy of the Deposition Plasma (II)- (2004)
  • 垣内 弘章 ID: 9000258639630

    大阪大学 大学院工学研究科 精密科学専攻 (2004 from CiNii)

    Articles in CiNii:1

    • High-rate Deposition of SiNx Films by Atmospheric Pressure Plasma CVD -Optical Emission Spectroscopy of the Deposition Plasma- (2004)
  • 垣内 弘章 ID: 9000340454345

    Articles in CiNii:1

    • 工学研究科発 大気圧プラズマを用いた薄膜作製プロセス (2017)
  • KAKIUCHI Hiroaki ID: 1000010233660

    Articles in CiNii:67

    • 大気圧RFプラズマの特性 (1995)
    • ラジカルソースMBE法を用いたSi(111)基板上AIN薄膜のエピタキシャル成長 (1995)
    • 回転電極を用いた高圧力プラズマCVDによるSi薄膜の高速成膜に関する研究(第1報) -成膜装置の試作とその成膜特性- (1996)
  • KAKIUCHI Hiroaki ID: 9000020759439

    Articles in CiNii:1

    • Quantum Size Effects of a-Si(:H)/a-SiC(:H) Multilayer Films Prepared by rf Sputtering. (1994)
  • KAKIUCHI Hiroaki ID: 9000020798514

    Articles in CiNii:1

    • Microstructure of a-Si/a-SiC Multilayer Films Prepared by rf Sputtering. (1994)
  • KAKIUCHI Hiroaki ID: 9000107384311

    Articles in CiNii:1

    • Formation of Polycrystalline Si Thin Films Using Nanocrystalline Ge Nuclei (2008)
  • KAKIUCHI Hiroaki ID: 9000345292855

    大阪大学 (2016 from CiNii)

    Articles in CiNii:1

    • Plasma-Enhanced Chemical Vapor Deposition (2016)
  • Kaiuchi Hiroaki ID: 9000258658811

    OSAKA UNIVERSITY (2013 from CiNii)

    Articles in CiNii:1

    • 大気開放プラズマ酸化による太陽電池用Si表面パッシベーョン技術の開発 (2013)
  • Kakiuchi Akihiro ID: 9000283820418

    Osaka University (2010 from CiNii)

    Articles in CiNii:1

    • 大気圧プラズマ酸化による太陽電池用Si表面パッシベーション膜の形成 (2010)
  • Kakiuchi Hiroaki ID: 9000258635905

    Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Epitaxial Growth of Si by Atmospheric Pressure Plasma CVD (IV) (2003)
  • Kakiuchi Hiroaki ID: 9000258637241

    Osaka University (2004 from CiNii)

    Articles in CiNii:1

    • Preparation of polycrystalline silicon films by atmospheric pressure plasma CVD (2004)
  • Kakiuchi Hiroaki ID: 9000258641266

    Osaka University (2005 from CiNii)

    Articles in CiNii:1

    • High-Rate Synthesis of Diamond by Atmospheric Pressure Plasma Chemical Vapor Deposition (2005)
  • Kakiuchi Hiroaki ID: 9000258645284

    Osaka University (2005 from CiNii)

    Articles in CiNii:1

    • Ultrahigh-Rate Deposition of Amorphous Silicon Films by Atmospheric Pressure Plasma Chemical Vapor Deposition (2005)
  • Kakiuchi Hiroaki ID: 9000258646688

    Osaka University (2006 from CiNii)

    Articles in CiNii:1

    • Characterization of high-rate deposited micrycrystalline silicon films prepared by atmospheric pressure plasma CVD (2006)
  • Kakiuchi Hiroaki ID: 9000258649319

    graduate school of Osaka university (2008 from CiNii)

    Articles in CiNii:1

    • The structure control of the poly-Si thin film by noble gas diluted atmospheric-pressure plasma enhanced chemical transport. (2008)
  • Kakiuchi Hiroaki ID: 9000258649324

    Osaka University (2008 from CiNii)

    Articles in CiNii:1

    • Low-temperature and high-rate growth of silicon nitride using atmospheric-pressure very high-frequency plasma (2008)
  • Kakiuchi Hiroaki ID: 9000258649328

    Osaka university (2008 from CiNii)

    Articles in CiNii:1

    • The inactivation property of <i>B.atrophaeus</i> by atmospheric pressure mist plasma sterilization (2008)
  • Kakiuchi Hiroaki ID: 9000258650595

    Graduate School of Engineering, Osaka University (2009 from CiNii)

    Articles in CiNii:1

    • PFCs-free dry etching method by utilizing atmospheric-pressure plasma enhanced chemical transport (2009)
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