Search Results1-20 of  23

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  • 大田 晃生 ID: 9000299515713

    Articles in CiNii:1

    • 光電子分光法による熱酸化SiO₂/4H-SiCの化学結合状態および欠陥準位密度評価 (シリコン材料・デバイス) (2015)
  • 大田 晃生 ID: 9000299515766

    Articles in CiNii:1

    • Impact of Embedded Ti Nanodots on Resistive Switching Characteristics of Si-rich Oxides (2015)
  • 大田 晃生 ID: 9000361224539

    Articles in CiNii:1

    • XPSによるHigh-k/SiO₂界面の化学構造およびダイポールの評価 (シリコン材料・デバイス) (2017)
  • 大田 晃生 ID: 9000361224578

    Articles in CiNii:1

    • Resistive Switching Properties of Si Oxide by Constant Voltage and Constant Current Application (2017)
  • 大田 晃生 ID: 9000361224767

    Articles in CiNii:1

    • エピタキシャルAg(111)上の極薄Ⅳ族結晶形成 (シリコン材料・デバイス) (2017)
  • 大田 晃生 ID: 9000377385396

    Articles in CiNii:1

    • リモートO₂プラズマ支援CVD SiO₂/GaN(0001)の化学結合状態及び電気特性評価 (電子デバイス) (2017)
  • 大田 晃生 ID: 9000377386661

    Articles in CiNii:1

    • リモートO₂プラズマ支援CVD SiO₂/GaN(0001)の化学結合状態及び電気特性評価 (電子部品・材料) (2017)
  • 大田 晃生 ID: 9000378057352

    Articles in CiNii:1

    • リモートO₂プラズマ支援CVD SiO₂/GaN(0001)の化学結合状態及び電気特性評価 (レーザ・量子エレクトロニクス) (2017)
  • 大田 晃生 ID: 9000396175861

    Articles in CiNii:1

    • ArまたはHe希釈リモート酸素プラズマCVDによって形成したSiO₂/GaN界面の構造・特性比較 (シリコン材料・デバイス) (2018)
  • 大田 晃生 ID: 9000396176260

    Articles in CiNii:1

    • リモートプラズマ支援CVDにより形成したSiO₂/GaN界面の化学結合状態および熱的安定性評価 (シリコン材料・デバイス) (2018)
  • 大田 晃生 ID: 9000396176474

    Articles in CiNii:1

    • X線光電子分光法によるY₂O₃/SiO₂界面におけるシリケート化反応およびダイポールの評価 (シリコン材料・デバイス) (2018)
  • 大田 晃生 ID: 9000403305699

    Articles in CiNii:1

    • Formation of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface by Thermal Annealing (2019)
  • 大田 晃生 ID: 9000403305949

    Articles in CiNii:1

    • Chemical Structure and Electronic States of HfSiO[x]/GaN(0001) (2019)
  • OHTA Akio ID: 9000107322813

    Graduate School of AdSM, Hiroshima University (2008 from CiNii)

    Articles in CiNii:1

    • XPS Study of TiAlN/HfSiON Gate Stack : Reduction of Effective Work Function Change Induced by Al Diffusion (2008)
  • OHTA Akio ID: 9000107323026

    Grad. School of AdSM, Hiroshima Univ. (2008 from CiNii)

    Articles in CiNii:1

    • Backside X-ray Photoelectron Spectroscopy of Ru/HfSiON Gate Stack : Origin of Charge in Effective Work Function of Ru (2008)
  • OHTA Akio ID: 9000107375223

    Articles in CiNii:1

    • Characterization of Chemical Bonding Features and Electrical Properties of Ge MIS and Ge/Metal Structures (2010)
  • OHTA Akio ID: 9000107375438

    Articles in CiNii:1

    • The influence of Y incorporation into TiO_2 on Electronic States and Resistive Switching Characteristics (2010)
  • OHTA Akio ID: 9000241976345

    Articles in CiNii:36

    • Photoemission Study of UV-O_3 Oxidized Ge(100) and Si(100) Surfaces (2005)
    • Chemical Bonding Features and Electrical Properties of Nitrogen Incorporated Y_2O_3-based Gate Dielectric Stacks (2005)
    • Characterization of Chemical Bonding Features of NH_3-Annealed Hafnium Oxides Formed on Si(100) (2005)
  • Ohta A. ID: 9000331908710

    IAR, Nagoya Univ.:Grad. Sch. of Eng., Nagoya Univ. (2016 from CiNii)

    Articles in CiNii:1

    • 19pPSA-38 First-principles study on two-dimensional crystals of group IV material on insulating film (2016)
  • Ohta Akio ID: 9000345209422

    Grad. Sch. of Eng., Nagoya Univ.:IAR, Nagoya Univ. (2018 from CiNii)

    Articles in CiNii:13

    • High Density Formation of Si Quantum Dots on Si Line and Space Structure (2016)
    • First-principles study on two-dimensional crystals of group IV material on amorphous insulating film (2016)
    • Chemical synthesis of group-IV nanosheets from layered compounds (2016)
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