Search Results1-18 of  18

  • 大鉢 忠 ID: 9000016949409

    Articles in CiNii:4

    • 硫化物スピネルの合成およびイオン伝導 (1979)
    • 分子線エピタキシャル(MBE)法によるSi基板上への3族窒化物ヘテロエピタキシャル成長 (第41回同志社大学理工学研究所研究発表会,2003年度同志社大学ハイテク・リサーチ,学術フロンティア合同シンポジウム講演予稿集) (2004)
    • MBE成長GaAs,GaN系ナノデバイス--シリコン系とGaN化合物半導体系ハイブリッドデバイス結晶成長 (別冊 第43回同志社大学理工学研究所研究発表会,2005年度同志社大学ハイテク・リサーチ,学術フロンティア合同シンポジウム講演予稿集〔含 当日配付資料〕) (2006)
  • 大鉢 忠 ID: 9000017794104

    Articles in CiNii:1

    • 銀化合物からの繊維状銀結晶の成長 (1972)
  • 大鉢 忠 ID: 9000020027616

    同志社大学工学部 (1973 from CiNii)

    Articles in CiNii:1

    • 固相/気相界面反応により成長させたα-Ag<SUB>2</SUB>Se単結晶の成長外形と面状欠陥 (1973)
  • 大鉢 忠 ID: 9000020184049

    同志社大・工 (1983 from CiNii)

    Articles in CiNii:1

    • ホタル石型PbF<SUB>2</SUB>の無秩序構造とイオン伝導の熱履歴 (1983)
  • 大鉢 忠 ID: 9000020290297

    同志社大工 (1989 from CiNii)

    Articles in CiNii:1

    • K<SUB>x</SUB> [Ga<SUB>8</SUB>Ga<SUB>8+x</SUB>Ti<SUB>16-x</SUB>O<SUB>56</SUB>] の一次元超イオン伝導を阻害する欠陥構造 (1989)
  • 大鉢 忠 ID: 9000020301186

    同志社大工 (1981 from CiNii)

    Articles in CiNii:1

    • チオスピネルの結晶学的研究: AgInSnS<SUB>4</SUB>, CuInSnS<SUB>4</SUB>の結晶構造 (1981)
  • 大鉢 忠 ID: 9000356668001

    Articles in CiNii:1

    • 第16回結晶成長国際サマースクール(ISSCG-16)報告 (第18回結晶成長国際会議(ICCGE-18) 第16回結晶成長国際サマースクール(ISSGE-16)特別号) (2016)
  • OHACHI Tadashi ID: 1000040066270

    Articles in CiNii:169

    • Electrical Nucleation and Crystal Growth under Micro Gravity of Supercooled Concentrated Solution of Sodium Acetate Trihydrate (1996)
    • Observation of Interference Fringe at the Interface of Supercooled Concentrated Solution of Sodium Acetate Trihydrate and Its Electrical Nucleation under Micro Gravity (1997)
    • Admittance Characteristics of Au/P-Si Schottky Diode with Damage Induced by Reactive Ion Ecthing (1992)
  • OHACHI Tadashi ID: 9000020184274

    Articles in CiNii:1

    • Preparation of Whiskers of A<sub>1-x</sub>Ti<sub>2+x</sub>M<sub>5-x</sub>O<sub>12</sub> (A=Na, K and M=Al, Ga) (1990)
  • OHACHI Tadashi ID: 9000020584011

    Articles in CiNii:1

    • Synthesis of a New Compound K<sub>x</sub>[Ga<sub>8</sub>Ga<sub>8+x</sub>Ti<sub>16-x</sub>O<sub>56</sub>] (1986)
  • OHACHI Tadashi ID: 9000253649901

    Department of Electronics, Doshisha University (1982 from CiNii)

    Articles in CiNii:1

    • Roughening Transition and Condensation of Sulphur on Electronic and Ionic Mixed Superionic Conductor α-Ag<SUB>2</SUB>S (1982)
  • OHACHI Tadashi ID: 9000257982581

    Department of Electrical Engineering, Doshisha University (2003 from CiNii)

    Articles in CiNii:1

    • Ab initio-based Approach to Structural Stability of GaAs Surfaces (2003)
  • Ohachi T. ID: 9000014590639

    Doshisha Univ. (2005 from CiNii)

    Articles in CiNii:5

    • 26aB10 Fabrication of 3C-SiC/Si(001) template under ultra high vacuum and uniformity of c-GaN through MBE system(NCCG-34) (2004)
    • 26aB09 Uniformity of nitrogen flux for the growth of cubic GaN by using by rf-MBE(NCCG-34) (2004)
    • 26aB08 Effects of nitrogen ions and electrons on the properties of h-GaN on 3C-SiC/Si by rf-MBE(NCCG-34) (2004)
  • Ohachi T ID: 9000003385927

    NIRIM (2001 from CiNii)

    Articles in CiNii:5

    • 2p-G-1 NMR Study of 1D Ionic Conductor, Na_xTi_<2-x>Ca_<4+x>O_<10> (1994)
    • 13p-DD-8 NMR Study of 1D Ionic Conductor, Na_<1-x>Ti_<2+x>B_<5-x>O_12(B:Ga^<3+>, Al^<3+>) (1993)
    • Low temperature ionic motion of one-dimensional ionic conductor, priderites (2000)
  • Ohachi T ID: 9000392289941

    Doshisha Univ. (1999 from CiNii)

    Articles in CiNii:1

    • 23aB3 Dependence of Ga sticking coefficient on Arsenic vapor pressure and crystal orientation from GaAs substrate grown by MBE using PL of asymmetric double Quantum wells (1999)
  • Ohachi Tadashi ID: 9000004337246

    Articles in CiNii:7

    • 酢酸ナトリウム3水和物水溶液の電気核形成と成長カイネティクス (原子レベルでの結晶成長機構) -- (核形成と成長のカイネティクス) (1994)
    • Theory and Experiments on Induction Time of Electrical Nucleation (<Special Issue>Nucleayion and Growth Kinetics) (1994)
    • ICCG-12/ICVGE-10報告 (1998)
  • Ohachi Tadashi ID: 9000242953223

    Articles in CiNii:1

    • Saotome Mitsugu, A pair of brother and sister in Meiji era: Niijima Yae and Yamamoto Kakuma (2013)
  • Ohachi Tadashi ID: 9000365080343

    Interface reaction epitaxy laboratory (2016 from CiNii)

    Articles in CiNii:1

    • Basic Theory of Epitaxy: Step Dynamics and Thermodynamics (2016)
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