Search Results1-20 of  27

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  • 小野 倫也 ID: 9000399842368

    Articles in CiNii:1

    • 第一原理に基づく大規模電子状態・電子輸送特性計算 (2009)
  • 小野 倫也 ID: 9000399842466

    Articles in CiNii:1

    • 第一原理に基づく大規模電子状態・量子輸送特性計算プログラムの開発 (2011)
  • 小野 倫也 ID: 9000403872919

    Articles in CiNii:1

    • First-principles study on the effect of SiO2 layers during oxidation of 4H-SiC (2015)
  • 小野 倫也 ID: 9000403874327

    Articles in CiNii:1

    • Numerical solver for first-principles transport calculation based on real-space finite-difference method (2015)
  • 小野 倫也 ID: 9000403875519

    Articles in CiNii:1

    • Real-space method for first-principles electron transport calculations: Self-energy terms of electrodes for large systems (2016)
  • 小野 倫也 ID: 9000403876117

    Articles in CiNii:1

    • First-Principles Study on Interlayer States at the 4H-SiC/SiO2 Interface and the Effect of Oxygen-Related Defects (2016)
  • 小野 倫也 ID: 9000403883469

    Articles in CiNii:1

    • Intrinsic origin of electron scattering at the 4H-SiC(0001)/SiO2 interface (2017)
  • 小野 倫也 ID: 9000403917435

    Articles in CiNii:1

    • First-principles calculation method for electron transport based on the grid Lippmann-Schwinger equation (2015)
  • 小野 倫也 ID: 9000403919327

    Articles in CiNii:1

    • First-principles study on oxidation of Ge and its interface electronic structures (2016)
  • 小野 倫也 ID: 9000403922806

    Articles in CiNii:1

    • Theoretical and experimental investigation of the atomic and electronic structures at the 4H-SiC(0001)/SiO2 interface (2017)
  • ONO Tomoya ID: 1000080335372

    Articles in CiNii:86

    • 超純水のみによる電気化学的加工法の第一原理分子動力学シミュレーション : 陰極におけるA1(001)表面加工現象 (2001)
    • ハロゲンによるSi表面エッチング過程の第一原理分子動力学シミュレーション : エッチング過程とガス材料依存性 (2001)
    • 光反射率スペクトルによるSiウエハ表面評価法の開発 : 装置の開発と加工表面評価 (2001)
  • ONO Tomoya ID: 9000014599321

    Grad. Schl. of Eng. Osaka Univ. (2010 from CiNii)

    Articles in CiNii:2

    • Fundamental Study on GeO_2/Ge Interface and its Electrical Properties (2009)
    • 24aPS-48 First-principles investigation of effective passivants at Ge/GeO_2 interface (2010)
  • ONO Tomoya ID: 9000257982869

    Graduate School of Engineering, Osaka University (2005 from CiNii)

    Articles in CiNii:1

    • First-Principles Study on the Scanning Tunneling Microscopy Image of H-Adsorbed Si(001) (2005)
  • Ono T. ID: 9000331909142

    Center for Computational Sciences, University of Tsukuba (2016 from CiNii)

    Articles in CiNii:1

    • 22pBA-4 First-principles electron-transport calculation method for real-space formalism : Self-energy terms of electrodes for large systems (2016)
  • Ono T. ID: 9000376937907

    Univ. of Tsukuba (2016 from CiNii)

    Articles in CiNii:1

    • First-principles transport calculation based on wave function matching method (2016)
  • Ono Tomoya ID: 9000237752008

    Graduate School of Engineering, Osaka University (2012 from CiNii)

    Articles in CiNii:1

    • 26pPSB-11 First-Principles Study on oxygen vacancy of HfO_2/SiO_2/Si Interfaces (2012)
  • Ono Tomoya ID: 9000237752057

    Grad. Schl. of Eng., Osaka Univ. (2012 from CiNii)

    Articles in CiNii:1

    • 26pPSB-23 First-principles investigation on atomic and electronic structure at Ge-MOS interfaces (2012)
  • Ono Tomoya ID: 9000241174792

    Grad. Schl. Eng., Osaka Univ. (2013 from CiNii)

    Articles in CiNii:1

    • 27aXK-11 First-principles calculation of scattering potentials of Si-Ge and Sn-Ge dimers on Ge(001) surfaces (2013)
  • Ono Tomoya ID: 9000258644861

    Osaka University (2005 from CiNii)

    Articles in CiNii:1

    • Scanning Tunneling Microscopy Study of Hydrogen-terminated Si(001) Surfaces after Wet Cleaning (2005)
  • Ono Tomoya ID: 9000264252902

    Graduate School of Engineering, Osaka University (2014 from CiNii)

    Articles in CiNii:1

    • 28pPSA-52 First-Principles Study on atomic structure and oxygen vacancy of HfO_2/SiO_2/Si Interfaces (2014)
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