Search Results1-19 of  19

  • 小野 行徳 ID: 9000003410643

    早大・理工 (1986 from CiNii)

    Articles in CiNii:1

    • 29a-S-10 水切り運動と出射角度分布 (1986)
  • 小野 行徳 ID: 9000242852128

    早大理工 (1987 from CiNii)

    Articles in CiNii:1

    • 29p-I-3 水切り運動と出射角度分布II(放射線物理) (1987)
  • 小野 行徳 ID: 9000321614882

    Articles in CiNii:1

    • シリコン酸化膜界面欠陥の低温チャージポンピング (電子デバイス) (2016)
  • 小野 行徳 ID: 9000321616290

    Articles in CiNii:1

    • シリコン酸化膜界面欠陥の低温チャージポンピング (シリコン材料・デバイス) (2016)
  • 小野 行徳 ID: 9000347053845

    NTT物性科学基礎研究所 (2006 from CiNii)

    Articles in CiNii:1

    • SOI MOSFETの閾値電圧に対するリンのイオン化の効果 (2006)
  • 小野 行徳 ID: 9000356547048

    Articles in CiNii:1

    • Time-domain charge pumping on silicon-on-insulator metal-oxide-semiconductor devices (2017)
  • 小野 行徳 ID: 9000356548108

    Articles in CiNii:1

    • Time-domain charge pumping on silicon-on-insulator metal-oxide-semiconductor devices (2017)
  • 小野 行徳 ID: 9000364880554

    早稲田大学理工学部物理学科 (1988 from CiNii)

    Articles in CiNii:1

    • 16.すれすれ入射イオンの拡散過程と水切り運動(早稲田大学理工学部物理学科,修士論文題目・アブストラクト(1987年度)その1) (1988)
  • 小野 行徳 ID: 9000388460688

    Articles in CiNii:1

    • Low-temperature charge pumping on silicon-on-insulator devices (2018)
  • 小野 行徳 ID: 9000388461569

    Articles in CiNii:1

    • Low-temperature charge pumping on silicon-on-insulator devices (2018)
  • 小野 行徳 ID: 9000403024454

    Articles in CiNii:1

    • Electron Nano-Aspirator using Electron-Electron Scattering in Si (2019)
  • 小野 行徳 ID: 9000403025320

    Articles in CiNii:1

    • Electron Nano-Aspirator using Electron-Electron Scattering in Si (2019)
  • 小野 行徳 ID: 9000403028590

    Articles in CiNii:1

    • Electron Nano-Aspirator using Electron-Electron Scattering in Si (2019)
  • ONO Yukinori ID: 9000087139072

    NTT Basic Research Laboratories (2012 from CiNii)

    Articles in CiNii:33

    • Room-temperature single-electron transfer and detection using silicon nanodevices : Fabrication using SOI and measurements of its characteristics (2005)
    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
    • Control of Valley and Spatial Subbands in Double-Gate MOSFETs : Electronic States in a Silicon Quantum Well(Functional Devices and Circuits) (2005)
  • ONO Yukinori ID: 9000107315107

    NTT Basic Research Laboratories (2012 from CiNii)

    Articles in CiNii:1

    • Deterministic-doped Silicon Devices and Their Quantum Transport (2012)
  • ONO Yukinori ID: 9000107357886

    NTT Basic Research Laboratories (2012 from CiNii)

    Articles in CiNii:1

    • Deterministic-doped Silicon Devices and Their Quantum Transport (2012)
  • ONO Yukinori ID: 9000317132721

    Graduate School of Science and Engineering University of Toyama (2015 from CiNii)

    Articles in CiNii:1

    • Accuracy of Time Domain Charge Pumping (2015)
  • ONO Yukinori ID: 9000317136230

    Graduate School of Science and Engineering University of Toyama (2015 from CiNii)

    Articles in CiNii:1

    • Accuracy of Time Domain Charge Pumping (2015)
  • Ono Yukinori ID: 9000004966957

    NTT LSI Laboratories (1993 from CiNii)

    Articles in CiNii:1

    • Intial Stage of the Thermal Oxidation on Si(111)7×7 Surtace. (1993)
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