Search Results1-20 of  147

  • 末益 崇 ID: 9000015299581

    Articles in CiNii:1

    • シリサイド半導体(BaSi2)を用いたSi系薄膜結晶太陽電池を目指して (特集 ワイドギャップ半導体の結晶成長技術--高度環境・エネルギー社会に向けて) (2009)
  • 末益 崇 ID: 9000018989853

    Articles in CiNii:1

    • 新材料BaSi₂を用いたレアアースレス薄膜結晶太陽電池を目指して (特集 光デバイスの未踏領域) (2012)
  • 末益 崇 ID: 9000329887811

    Articles in CiNii:1

    • BaSi₂系薄膜太陽電池に向けた取り組みと今後の展望 (特集 環境半導体材料の最新動向) (2016)
  • 末益 崇 ID: 9000403102908

    Articles in CiNii:1

    • Sb-doped crystallization of densified precursor for n-type polycrystalline Ge on an insulator with high carrier mobility (2019)
  • 末益 崇 ID: 9000403103207

    Articles in CiNii:1

    • Operation of BaSi2 homojunction solar cells on p+-Si(111) substrates and the effect of structure parameters on their performance (2019)
  • 末益 崇 ID: 9000403146663

    Articles in CiNii:1

    • High-Electrical-Conductivity Multilayer Graphene Formed by Layer Exchange with Controlled Thickness and Interlayer (2019)
  • 末益 崇 ID: 9000403321819

    Articles in CiNii:1

    • High photoresponsivity in a GaAs film synthesized on glass using a pseudo-single-crystal Ge seed layer (2019)
  • 末益 崇 ID: 9000403850476

    Articles in CiNii:1

    • Investigation of current injection in β-FeSi2/Si double-heterostructures light-emitting diodes by molecular beam epitaxy (2007)
  • 末益 崇 ID: 9000403850480

    Articles in CiNii:1

    • Effects of Sr addition on crystallinity and optical absorption edges in ternary semiconducting silicide Ba1-xSrxSi2 (2007)
  • 末益 崇 ID: 9000403850484

    Articles in CiNii:1

    • Growth and characterization of group-III impurity-doped semiconducting BaSi2 films grown by molecular beam epitaxy (2007)
  • 末益 崇 ID: 9000403850490

    Articles in CiNii:1

    • Epitaxial growth of Fe3Si/CaF2/Fe3Si magnetic tunnel junction structures on CaF2/Si(111) by molecular beam epitaxy (2007)
  • 末益 崇 ID: 9000403850644

    Articles in CiNii:1

    • Growth of highly oriented crystalline α-Fe/AlN/Fe3N trilayer structures on Si(1 1 1) substrates by molecular beam epitaxy (2007)
  • 末益 崇 ID: 9000403852215

    Articles in CiNii:1

    • Semiconductor(BaSi2)/metal(CoSi2) Schottky-barrier structures epitaxially grown on Si(1 1 1) substrates by molecular beam epitaxy (2008)
  • 末益 崇 ID: 9000403854900

    Articles in CiNii:1

    • Growth of ferromagnetic Fe4N epitaxial layers and a-axis-oriented Fe4N/MgO/Fe magnetic tunnel junction on MgO(0 0 1) substrates using molecular beam epitaxy (2009)
  • 末益 崇 ID: 9000403855272

    Articles in CiNii:1

    • p-Si/beta-FeSi2/n-Si double-heterostructure light-emitting diodes achieving 1.6 µm electroluminescence of 0.4 mW at room temperature (2009)
  • 末益 崇 ID: 9000403855279

    Articles in CiNii:1

    • Spin polarization of Fe4N thin films determined by point-contact Andreev reflection (2009)
  • 末益 崇 ID: 9000403856160

    Articles in CiNii:1

    • Fabrication of (1 1 1)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application (2009)
  • 末益 崇 ID: 9000403857871

    Articles in CiNii:1

    • p-Si/beta-FeSi2/n-Si double-heterostructure light-emitting diodes achieving 1.6 µm electroluminescence of 0.4 mW at room temperature (2009)
  • 末益 崇 ID: 9000403857877

    Articles in CiNii:1

    • Temperature dependence of electroluminescence from silicon p-i-n light-emitting diodes (2006)
  • 末益 崇 ID: 9000403857884

    Articles in CiNii:1

    • Effect of using a high-purity Fe source on the transport properties of p-type beta-FeSi2 grown by molecular-beam epitaxy (2007)
Page Top