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  • 松山 日出人 ID: 9000008954389

    Articles in CiNii:2

    • プラスチックシンチレ-タ-を用いた(e,e′p)実験装置 (1988)
    • Study of the 31P(γ,p) Reaction at Eγ=55-88MeV (1993)
  • MATSUYAMA H. ID: 9000018189077

    Process & Manufacturing Engineering, Semiconductor Company, Toshiba Corporation (2008 from CiNii)

    Articles in CiNii:1

    • Highly reliable low resistance Cu contact using novel CVD Ru/TiN/Ti stacked liner (2008)
  • MATSUYAMA Hideto ID: 9000004959200

    Microelectronics Engineering Laboratory, Toshiba Corporation (2000 from CiNii)

    Articles in CiNii:1

    • Relation between polysilane structures and pattern transfer properties for LSI lithography : Polysilanes having both anti-reflective and pattern-transfer properties (2000)
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