Search Results1-11 of  11

  • 林 久貴 ID: 9000014448470

    日赤医療センター (1993 from CiNii)

    Articles in CiNii:2

    • 3. 放射線治療における位置の再現性-とくに下腹部について(東京部会) (1991)
    • 6. 放射線治療技術研究会「外部照射における人為ミスの検討」(東京部会) (1993)
  • 林 久貴 ID: 9000045871627

    国立がんセンター病院政放射線治療部 (1989 from CiNii)

    Articles in CiNii:1

    • コンピューティドシミュレーション画像を用いた新しい放射線治療計画法に関する研究(その2) (1989)
  • HAYASHI Hisataka ID: 9000000076214

    Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies(ASET) (1998 from CiNii)

    Articles in CiNii:2

    • Analyses of Radicals in Etching Plasma Using Laser Spectroscopy in Association of Super-Advanced Electronics Technologies (1998)
    • High Aspect Ratio SiO_2 Etching Technique (1997)
  • HAYASHI Hisataka ID: 9000004970060

    Toshiba Corporation (2007 from CiNii)

    Articles in CiNii:4

    • Restoration process for Porous Low-k/Copper Dual Damascene Interconnects (2007)
    • SON-MOSFET using ESS technique for SoC applications (2002)
    • Fabrication of SON(Silicon on Nothing)-MOSFET and Its ULSI Applications (2002)
  • HAYASHI Hisataka ID: 9000253326162

    ULSI Research Laboratories, Toshiba Corpora-tion. (1995 from CiNii)

    Articles in CiNii:1

    • Plasma etching technology (1995)
  • HAYASHI Hisataka ID: 9000283413864

    <I>Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies</I> (1998 from CiNii)

    Articles in CiNii:1

    • Analyses of Radicals in Etching Plasma Using Laser Spectroscopy in Association of Super-Advanced Electronics Technologies (1998)
  • HAYASHI Hisatake ID: 9000004966811

    Association of Super-advanced Electronics Technologies (1999 from CiNii)

    Articles in CiNii:4

    • Plasma etching technology (1995)
    • SiO_2 Selective Etch Mechanism in High-Aspect-Ratio holes (1996)
    • Characterization of Highly Selective SiO_2/Si_3N_4 etching of High-Aspect-Ratio Holes (1995)
  • Hayashi Hisataka ID: 9000383165756

    TOSHIBA MEMORY CORPORATION (2017 from CiNii)

    Articles in CiNii:1

    • 高濃度CF<sub>4</sub>ガスを用いた高圧プラズマCVDによるフルオロカーボン膜の形成 (2017)
  • Hayashi Hisataka ID: 9000383165783

    東芝メモリ (2017 from CiNii)

    Articles in CiNii:1

    • 準大気圧プラズマを用いた高濃度パーフルオロカーボンガスの分解特性 (2017)
  • Hayashi Hisataka ID: 9000410039333

    Kioxia Cop. (2020 from CiNii)

    Articles in CiNii:1

    • CF<sub>4</sub>プラズマによりオンサイト生成されるC<sub>2</sub>F<sub>4</sub>ガスの濃縮・高純度化 (2020)
  • Sunaoka Masayoshi ID: 9000005073331

    放射線医学総合研究所病院・放射線科 (2000 from CiNii)

    Articles in CiNii:50

    • DEPTH ABSORBED DOSE CHARACTERISTICS FOR SEVERAL MEDICAL ELECTRON ACCELERATORS : ACCORDING TO THE JASTRO QA PROGRAM (1995)
    • Comparison of the X-ray absorbed doses at the calibration point measured with electron accelerators in different hospitals in Tokyo area(2nd report)(Program of 23rd Autumn Meeting) (1995)
    • 495 Comparison of the X-ray absorbed doses at the calibration point measured with electron accelerators in different hospitals in Tokyo area (1995)
Page Top