Search Results1-13 of  13

  • 梅田 享英 ID: 9000403064666

    Articles in CiNii:7

    • EPR identification of two types of carbon vacancies in 4H-SiC (2004)
    • EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC (2004)
    • Electrically detected magnetic resonance of ion-implantation damage centers in silicon large-scale integrated circuits (2003)
  • 梅田 享英 ID: 9000403064692

    Articles in CiNii:1

    • Electronic Structure of Band-Tail Electrons in a Si:H (1996)
  • 梅田 享英 ID: 9000403064700

    Articles in CiNii:1

    • Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories (2006)
  • 梅田 享英 ID: 9000403073461

    Articles in CiNii:1

    • Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance (2011)
  • 梅田 享英 ID: 9000403073516

    Articles in CiNii:1

    • Fixed nitrogen atoms in the SiO2/SiC interface region and their direct relationship to interface trap density (2011)
  • 梅田 享英 ID: 9000403076537

    Articles in CiNii:1

    • Long coherence time of spin qubits in 12C enriched polycrystalline chemical vapor deposition diamond (2012)
  • 梅田 享英 ID: 9000403077925

    Articles in CiNii:1

    • Microscopic origins of dry-etching damages in silicon large-scaled integrated circuits revealed by electrically detected magnetic resonance (2014)
  • 梅田 享英 ID: 9000403087338

    Articles in CiNii:1

    • Towards a spin-ensemble quantum memory for superconducting qubits (2016)
  • 梅田 享英 ID: 9000403143501

    Articles in CiNii:1

    • Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors (2018)
  • UMEDA Takahide ID: 9000002015265

    Articles in CiNii:2

    • Microscopic mechanism of variable retention time phenomenon in dynamic random access memories (2007)
    • ESR and EDMR study on nitrided 4H-SiC MOS structures (2016)
  • UMEDA Takahide ID: 9000021173046

    Research Center for Knowledge Communities, Graduate School of Library, Information and Media Studies, University of Tsukuba (2008 from CiNii)

    Articles in CiNii:1

    • A pinpoint search system for a specialized research area in physics and engineering : "Defect dat@base" for defects in semiconductors and semiconductor devices (2008)
  • UMEDA Takahide ID: 9000244927083

    Institute of Applied Physics, University of Tsukuba (2013 from CiNii)

    Articles in CiNii:1

    • 4H-SiC MOS interface states studied by electron spin resonance spectroscopy (2013)
  • Umeda T ID: 9000003386096

    Univ. of Tsukuba (2011 from CiNii)

    Articles in CiNii:7

    • アモルファスシリコン中の光励起下の局在電子 (1998)
    • 4a-R-12 Pulsed ESR Studies of Local Stucure of Atimic Hydrogen Site Cavities of Zeolite Crystal (1994)
    • 28aXT-10 Electron spin phase relaxation of donors and acceptors in SiC (2004)
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