Search Results1-20 of  21

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  • 渡辺 匡人 ID: 9000007915968

    Articles in CiNii:1

    • 新技術・新製品 電流磁場印加法(EMCZ法)によるシリコン単結晶中の酸素濃度制御 (1999)
  • 渡邉 匡人 ID: 9000018448743

    Articles in CiNii:1

    • 金属融体の高精度密度計測--静磁場印加電磁浮遊法による高温金属融体の高精度密度計測 (特集 無容器浮遊による高温融体熱物性測定--その特徴と発展) (2011)
  • 渡邉 匡人 ID: 9000025051405

    Articles in CiNii:1

    • Time-resolved X-ray Diffraction Measurement during Containerless Solidification Processes of High-temperature Undercooled Melts (2012)
  • 渡邉 匡人 ID: 9000291607285

    Articles in CiNii:1

    • The Retrospections of JACG by Photos for 10 Years (2015)
  • 渡邉 匡人 ID: 9000308053230

    学習院大学 (2015 from CiNii)

    Articles in CiNii:1

    • The 44th National Conference on Crystal Growth (NCCG-44) (2015)
  • 渡邊 匡人 ID: 9000308719518

    Articles in CiNii:1

    • 自治体発 条例REPORT 北海道追分町 住んでくれて「ど~も!」もらって「ど~も」で ど~も²条例 : 追分町定住促進条例 (2006)
  • 渡邉 匡人 ID: 9000403321901

    Articles in CiNii:1

    • <研究報告>数値解析による界面自由エネルギーの導出 (2018)
  • WATANABE Masahito ID: 9000001653743

    日本電気株式会社基礎研究所 (1999 from CiNii)

    Articles in CiNii:1

    • NUMERICAL ANALYSIS OF CZOCHRALSKI METHOD UNDER CUSP MAGNETIC FIELDS (1999)
  • WATANABE Masahito ID: 9000020289347

    日本電気 (株) 基礎研究所 (1991 from CiNii)

    Articles in CiNii:1

    • In-situ observation of molten silicon convection was perfrmed by X-ray radiography. (1991)
  • WATANABE Masahito ID: 9000247077253

    Gakushuin Univ. Dept. Phys. (1989 from CiNii)

    Articles in CiNii:1

    • 28a-Q-3 The concentration gradient around a growing crystal in an aqueous solution (1989)
  • WATANABE Masahito ID: 9000247077256

    Gakushuin Unv. (1989 from CiNii)

    Articles in CiNii:1

    • 28a-Q-4 Structure of highly concentrated aqueous solutions of KDP(KH_2PO_4) with impurities (1989)
  • WATANABE Masahito ID: 9000253325374

    FundamentalResearchLaboratories,NEC corporation (1991 from CiNii)

    Articles in CiNii:1

    • Three-dimensional observation of molten silicon convection (1991)
  • WATANABE Masahito ID: 9000254865240

    Fundamental Research Laboratories, NEC Corporation (1994 from CiNii)

    Articles in CiNii:1

    • Melt Flow during Silicon Crystal Growth. (1994)
  • WATANABE Masahito ID: 9000258012753

    Gakushuin University (2007 from CiNii)

    Articles in CiNii:1

    • Suggestion for identifying rotation and l=2, m=.+-.2 oscillation in surface tension measurement by oscillating droplet method (2007)
  • WATANABE Masahito ID: 9000399852835

    学習院大学 (2018 from CiNii)

    Articles in CiNii:1

    • Measurement of Thermophysical Property of High Temperature Liquids under Microgravity Conditions (2018)
  • Watanabe M. ID: 9000003525981

    NEC (2001 from CiNii)

    Articles in CiNii:21

    • Melt Flow during Silicon Crystal Growth (1994)
    • Si融液対流の3次元観察 (1991)
    • A study of vacancy-type defects introduced by the carbonization of Si by monoenergetic positron beams (2001)
  • Watanabe Masahito ID: 1000040337902

    Gakushuin University (2008 from CiNii)

    Articles in CiNii:28

    • Structure Analysis of High Temperature Melts in Undercooled State by Using Levitation Technique (2003)
    • Structure and Thermophysical Properties of Undercooled Molten Silicon (2003)
    • In-situ identification of phase structure in the containerless solidification of undercooled Co-Si alloys by X-ray synchrotron radiation (2005)
  • Watanabe Masahito ID: 9000006777498

    Articles in CiNii:44

    • Collaborative Study for Measurements of Thermophysical Properties and Structure of Molten Silicon Using Electromagnetic Levitation (2002)
    • Development of gas-jet levitation system for structural study on undercooled liquid (2002)
    • Thermophysical Properties Required for Numerical Simulation of Silicon Crystal Growth Processes (2003)
  • Watanabe Masahito ID: 9000238156607

    学習院大学 (2013 from CiNii)

    Articles in CiNii:1

    • Memories of the late Prof. Ogawa (2013)
  • Watanabe Masahito ID: 9000283784100

    Gakushuin University (2003 from CiNii)

    Articles in CiNii:1

    • Heat and Mass Transfer in Si Melt during EMCZ Crystal Growth (2003)
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