Search Results1-20 of  22

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  • 矢口 裕之 ID: 9000006217277

    Articles in CiNii:1

    • Mineral assemblage of the Tama-I Loam Formation in Kanto Plain, central Japan and correlation of some tephra layers intercalated in the Formation (2001)
  • 矢口 裕之 ID: 9000381464671

    Articles in CiNii:1

    • Characterization of oxide films on 4H-SiC epitaxial (000(1)over-bar) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation (2006)
  • 矢口 裕之 ID: 9000381466066

    Articles in CiNii:1

    • Twin photoluminescence peaks from single isoelectronic traps in nitrogen delta-doped GaAs (2008)
  • 矢口 裕之 ID: 9000381466446

    Articles in CiNii:1

    • Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime (2008)
  • 矢口 裕之 ID: 9000381467490

    Articles in CiNii:1

    • Epitaxial Growth of Zincblende Nitride Semiconductors(<Special Issue> Stable or Metastable: Zinc Blende and Wurtzite Structures) (2008)
  • 矢口 裕之 ID: 9000381470944

    Articles in CiNii:1

    • Photoluminescence from Isoelectronic Traps in Dilute Nitride Semiconductor Alloys (2006)
  • 矢口 裕之 ID: 9000381470950

    Articles in CiNii:1

    • Towards Frontier Photonics Based on Advanced Materials (2006)
  • 矢口 裕之 ID: 9000381471543

    Articles in CiNii:1

    • Characterization of oxidizing interface and elucidation of oxidation mechanism of SiC semiconductor using spectroscopic ellipsometry (2009)
  • 矢口 裕之 ID: 9000381471595

    Articles in CiNii:1

    • Theoretical studies for Si and C emission into SiC layer during oxidation (2013)
  • 矢口 裕之 ID: 9000381472019

    Articles in CiNii:1

    • Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry (2001)
  • 矢口 裕之 ID: 9000381472111

    Articles in CiNii:1

    • Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry (2001)
  • 矢口 裕之 ID: 9000381472115

    Articles in CiNii:1

    • Development of A New Crystal Growth Method of Silicon Carbide High-Temperature Semiconductor - Characterization of Crystal Structures andProperties (2001)
  • 矢口 裕之 ID: 9000381472254

    Articles in CiNii:1

    • Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry (2002)
  • 矢口 裕之 ID: 9000381472306

    Articles in CiNii:1

    • Development of Deep Ultraviolet Spectroscopic Characterization System for Nano Surface Structure of Wide Bandgap Semiconductors (2003)
  • 矢口 裕之 ID: 9000381472588

    Articles in CiNii:1

    • RF-MBE growth of InN epitaxial layers and InN/InGaN quantum wells on SiC substrates (2005)
  • 矢口 裕之 ID: 9000381472701

    Articles in CiNii:1

    • RF-MBE growth of cubic InN films on MgO (001) substrates (2006)
  • 矢口 裕之 ID: 9000381472797

    Articles in CiNii:1

    • RF-MBE Growth of InN/InGaN Quantum Well Structures (2007)
  • 矢口 裕之 ID: 9000381472888

    Articles in CiNii:1

    • RF-MBE Growth of a-plane InN on r-plane sapphire substrates (2008)
  • YAGUCHI Hiroyuki ID: 9000254265100

    (株)北辰電機製作所 航空計器技術設計部門 (1973 from CiNii)

    Articles in CiNii:1

    • Mass-Flowmeter for in Flight Measurment (1973)
  • YAGUCHI Hiroyuki ID: 9000254743933

    株式会社北辰電機製作所 (1975 from CiNii)

    Articles in CiNii:1

    • Fuel Gauge for Aircrafts (1975)
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