Search Results1-20 of  58

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  • FUKUYAMA Hiroyuki ID: 9000284630017

    IMRAM, Tohoku Univ. (2015 from CiNii)

    Articles in CiNii:13

    • High-Temperature Melts and Materials Processing (2012)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
  • FUKUYAMA Hiroyuki ID: 9000284630017

    IMRAM, Tohoku Univ. (2015 from CiNii)

    Articles in CiNii:13

    • High-Temperature Melts and Materials Processing (2012)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
  • FUKUYAMA Hiroyuki ID: 9000284630017

    IMRAM, Tohoku Univ. (2015 from CiNii)

    Articles in CiNii:13

    • High-Temperature Melts and Materials Processing (2012)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
  • FUKUYAMA Hiroyuki ID: 9000284630017

    IMRAM, Tohoku Univ. (2015 from CiNii)

    Articles in CiNii:13

    • High-Temperature Melts and Materials Processing (2012)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
  • FUKUYAMA Hiroyuki ID: 9000284630017

    IMRAM, Tohoku Univ. (2015 from CiNii)

    Articles in CiNii:13

    • High-Temperature Melts and Materials Processing (2012)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
  • FUKUYAMA Hiroyuki ID: 9000284630017

    IMRAM, Tohoku Univ. (2015 from CiNii)

    Articles in CiNii:13

    • High-Temperature Melts and Materials Processing (2012)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
  • FUKUYAMA Hiroyuki ID: 9000284630017

    IMRAM, Tohoku Univ. (2015 from CiNii)

    Articles in CiNii:13

    • High-Temperature Melts and Materials Processing (2012)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
  • FUKUYAMA Hiroyuki ID: 9000284630017

    IMRAM, Tohoku Univ. (2015 from CiNii)

    Articles in CiNii:13

    • High-Temperature Melts and Materials Processing (2012)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
  • FUKUYAMA Hiroyuki ID: 9000284630017

    IMRAM, Tohoku Univ. (2015 from CiNii)

    Articles in CiNii:13

    • High-Temperature Melts and Materials Processing (2012)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
  • FUKUYAMA Hiroyuki ID: 9000284630017

    IMRAM, Tohoku Univ. (2015 from CiNii)

    Articles in CiNii:13

    • High-Temperature Melts and Materials Processing (2012)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
  • FUKUYAMA Hiroyuki ID: 9000284630017

    IMRAM, Tohoku Univ. (2015 from CiNii)

    Articles in CiNii:13

    • High-Temperature Melts and Materials Processing (2012)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
  • FUKUYAMA Hiroyuki ID: 9000284630017

    IMRAM, Tohoku Univ. (2015 from CiNii)

    Articles in CiNii:13

    • High-Temperature Melts and Materials Processing (2012)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
    • Annealing in N_2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE (2013)
  • 福山 博之 ID: 9000000065221

    Articles in CiNii:176

    • 室内空気質の評価(海外文献紹介) (1995)
    • 室内空気質とASHRAE技術賞(海外文献紹介) (1995)
    • 快適性と室内空気質(海外文献紹介) (1995)
  • 福山 博之 ID: 9000000407705

    東工大院・理工 (2000 from CiNii)

    Articles in CiNii:1

    • 銅製錬自溶炉およびS炉(MI)から発生するタセストの成分調査 (2000)
  • 福山 博之 ID: 9000001915854

    ダイダン(株)技術センター (1999 from CiNii)

    Articles in CiNii:1

    • AIAによる「医療施設指針」について (1999)
  • 福山 博之 ID: 9000003783161

    (株)神戸製鋼所 (1996 from CiNii)

    Articles in CiNii:1

    • 高エネルギーマイクロイオンビーム分析装置 (1996)
  • 福山 博之 ID: 9000003839263

    東京医歯大 手術部 (1976 from CiNii)

    Articles in CiNii:2

    • 製薬工場における新しい層流方式(Australian R.A.C.H.Nov.1972) (1975)
    • 2 Bioclean Unit (垂直層流方式) の実験的研究 (全国国立大学病院手術部協議会研究会) (1976)
  • 福山 博之 ID: 9000007311986

    Articles in CiNii:1

    • ハワイ火山の岩石学 (1980)
  • 福山 博之 ID: 9000007841738

    Articles in CiNii:1

    • 米国最新物流と弱者の活路--アメリカの現場はどう変わってきたか (特集 物流淘汰の時代) (1996)
  • 福山 博之 ID: 9000009761320

    Articles in CiNii:1

    • 青果物市場におけるロジスティクスの構築 (特集 青果物ロジスティクスの構築--その現状と課題) (2003)
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