Search Results1-15 of  15

  • 辰巳 徹 ID: 9000003426930

    早大理工 (1983 from CiNii)

    Articles in CiNii:5

    • 3p-NT-2 Si(111)-Au超格子構造の中速He^+イオン照射効果 (1981)
    • 1a-A-2 Si(111)7×7⟷1×1 2次元相転移のイオン後方散乱による解析 (1982)
    • 1p-A-3 Si(111)-Au超格子構造のイオン後方散乱収率の角度依存性 (1982)
  • 辰巳 徹 ID: 9000009411659

    Articles in CiNii:1

    • SiGe-Si UHV-CVD技術 (1999)
  • 辰巳 徹 ID: 9000020100167

    日電・基礎研 (1986 from CiNii)

    Articles in CiNii:1

    • シンクロトロン放射X線によるアモルファスSi/Ge0.2Si0.8 (111) の界面超構造の観測 (1986)
  • TATSUMI T. ID: 9000004966251

    ULSI Device Development Division, System Devices and Fundamental Research, NEC Corporation (2001 from CiNii)

    Articles in CiNii:3

    • A High-endurance 96-Kbit FeRAM Embedded in a Smart Card LSI Using Ir/IrO2/PZT(MOCVD)/Ir Ferroelectric Capacitors (2001)
    • A Giga-Bit DRAM Contact Technology Using Anisotropical Selective Epitaxial Silicon : Formation of a self-aligned contact pad (1996)
    • A 128Kbit FeRAM Macro for a Contact/Contactless Smart Card Microcontroller (2000)
  • TATSUMI T. ID: 9000004967360

    Silicon Systems Research Laboratories, NEC Corporation (1999 from CiNii)

    Articles in CiNii:1

    • Fluorinated Amorphous Carbon thin Films Grown by High Density PECVD for Multilevel Interconnections of Integrated Circuits (1999)
  • TATSUMI Toru ID: 9000004779183

    Articles in CiNii:5

    • 弗素化アモルファスカ-ボン低誘電率膜の生成とULSI多層配線への適応 (特集 新材料の導入と半導体プロセス技術) (1998)
    • プラズマCVDによる低誘電率絶縁膜堆積技術 (特集 半導体製造プロセス用ケミカルスの新展開(Part1)) (1999)
    • Vertically Non-uniform Channel Doping for the Suppression of MOSFET Threshold Voltage Fluctuation (1998)
  • TATSUMI Toru ID: 9000004929864

    Microelectronics Research Laboratories, NEC Corporation (1997 from CiNii)

    Articles in CiNii:5

    • A 1 Gb/s 8-channel array OEIC with SiGe/Si photodetectors (1997)
    • A 1Gb/s x 8-channel Si-OEIC with SiGe/Si photodetectors (1997)
    • Si-analog ICs for 20-Gb/s optical receiver (1994)
  • TATSUMI Toru ID: 9000252845126

    Fundamental Research Laboratories, NEC Corporation. (1988 from CiNii)

    Articles in CiNii:1

    • Doping Techniques for Si MBE and Device Applications (1988)
  • TATSUMI Toru ID: 9000253325484

    Microelectronics Research Labs., NEC Corporation. (1992 from CiNii)

    Articles in CiNii:1

    • Growth mechanism of polycrystalline Si films with hemisperical grains (1992)
  • TATSUMI Toru ID: 9000253326150

    Microelectronics Research Laboratories, NEC Corporation (1995 from CiNii)

    Articles in CiNii:1

    • Effect of adsorbed hydrogen on low-temperature epitaxial growth in ultra-high-vacuum chemical-vapor-deposition (1995)
  • Tatsumi T. ID: 9000247078428

    NEC Corporation (1989 from CiNii)

    Articles in CiNii:1

    • 28a-TJ-6 Analysis of the √<3>x√<3>-B Structure at the a-Si/Si(111) Interface Studied by X-Ray Diffraction (1989)
  • Tatsumi T ID: 9000003526332

    NEC Corporation (2008 from CiNii)

    Articles in CiNii:19

    • 半導体メモリー用HSG-Siキャパシタの開発 (1997)
    • Growth mechanism of polycrystalline Si films with hemisperical grains (1992)
    • Fabrication and Electrical Characteristics of HfSiON MOS Transistors with Ni-silicide Gate Electrode by using Phase-Controlled Full-Silicidation (PC-FUSI) Technique (2005)
  • Tatsumi Toru ID: 9000003392181

    Microelectronics Res. Labs., NEC Corp. (1994 from CiNii)

    Articles in CiNii:2

    • 12a-DE-9 Pressure Dependence of Photoluminescence Spectra of Si/Si_<1-x>Ge_X (1993)
    • 29a-K-1 Pressure Dependence of Photoluminescence Spectra of Si/Si_<1-x>Ge_x II (1994)
  • Tatsumi Toru ID: 9000003392767

    Microelectronics Research Laboratories, NEC Corporation (1995 from CiNii)

    Articles in CiNii:4

    • Effect of adsorbed hydrogen on low-temperature epitaxial growth in ultra-high-vacuum chemical-vapor-deposition (1995)
    • 14a-DH-10 Defect and island formation in Stranski-Krastanov growth of Ge on Si(001)surfaces (1993)
    • 4a-PS-34 Modification of a 7x7 superstructure buried at a-Si/Si(111)interface during solid-phase epitaxial growth (1990)
  • Tatusmi T. ID: 9000003411568

    Fundamental Research Laboratories,Microelectronics Research Laboratories (1990 from CiNii)

    Articles in CiNii:3

    • Si-MBE技術を用いたデバイス試作と選択成長 (シリコンLSIの高性能化技術特集) -- (プロセス・結晶技術--結晶) (1989)
    • 26a-P-9 a-Si/Si(111)-7x7,a-Si/Ge_<0.2>Si_<0.8>(111)-5x5 の界面超構造 (1987)
    • 5P-E-4 Interface Structure at Molecular-Beam-Deposited SiO_2/Si(111) (1990)
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