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  • 遠田 義晴 ID: 9000242848497

    東北大・理 (1987 from CiNii)

    Articles in CiNii:1

    • 28a-LM-3 角度分解逆光電子分光法 : グラファイトの非占有電子帯構造(イオン結晶・光物性) (1987)
  • 遠田 義晴 ID: 9000242849640

    東北大理 (1987 from CiNii)

    Articles in CiNii:1

    • 30p-H-14 Si(111)√3×√3-Ag表面の内殻準位シフト(表面・界面) (1987)
  • 遠田 義晴 ID: 9000242856831

    東北大理 (1988 from CiNii)

    Articles in CiNii:1

    • 31a-M2-1 Si(111)√3x√3-Sbの角度分解正逆光電子分光(表面・界面) (1988)
  • 遠田 義晴 ID: 9000242856840

    東北大理 (1988 from CiNii)

    Articles in CiNii:1

    • 31a-M2-3 Si(oo1)2×1-sの角度分解UPS(表面・界面) (1988)
  • 遠田 義晴 ID: 9000305633153

    Articles in CiNii:1

    • Effect of surface adsorbates on chemical shifts of core-level spectra for silicon oxinitride films (2015)
  • 遠田 義晴 ID: 9000347100696

    弘前大学 (2012 from CiNii)

    Articles in CiNii:1

    • Emergence of pseudo-scalarpotential in graphene by controlling interfacial strain (2012)
  • 遠田 義晴 ID: 9000369348540

    弘前大学 (2017 from CiNii)

    Articles in CiNii:1

    • 真空蒸着法によるBi 媒介Ge ナノドットの形成過程評価 (2017)
  • 遠田 義晴 ID: 9000398264779

    Articles in CiNii:1

    • Si基板上SiO₂薄膜の電子線照射による還元反応 (電子部品・材料) (2018)
  • 遠田 義晴 ID: 9000398264832

    Articles in CiNii:1

    • Surface Composition and Chemical Bond Structure of Zr-based Metallic Glass (2018)
  • ENTA Yoshiharu ID: 9000018788136

    Graduate School of Science and Technology, Hirosaki University (2011 from CiNii)

    Articles in CiNii:1

    • Uneven Thermal Decomposition of Silicon Oxide Layer (2011)
  • Enta Y. ID: 9000003200441

    ISSP.Univ.of Tokyo (1992 from CiNii)

    Articles in CiNii:11

    • 25a-R-5 Coverage dependence of K and Na adsorption on a cooled Si(001) surface (1991)
    • 25p-PS-48 Study of K/Si(001)2x1 Surface by Photoelectron Spectroscopy with Syncrotron Radiation (1991)
    • 30p-E-11 重希土類金属のUV-BIS (1986)
  • Enta Y. ID: 9000247078442

    Tohoku Univ. (1989 from CiNii)

    Articles in CiNii:1

    • 28p-TJ-9 Angle-resolved photoelectron spectroscopy study of single-domain Si(001)2x1-Cs surface (1989)
  • Enta Y ID: 1000020232986

    Articles in CiNii:13

    • Photoelectron Intensity Oscillation during Silicon MBE Growth (1998)
    • Structure and Thermal Stability of the Chemical Bondings of Diamond-Like Carbon (DLC) Films Prepared by RF Magnetron Sputtering (2003)
    • Si 2p Spectra of Initial Thermal Oxides on Si(100)Oxidized by H2O (Proceedings of the Second International Conference on SRMS(Synchrotron Radiation in Materials Science)(2)) (1999)
  • Enta Yoshiharu ID: 9000255728180

    Articles in CiNii:1

    • Surface Electronic States during Si GasSource Molecular Beam Epitaxy. (1998)
  • Enta Yoshiharu ID: 9000283847798

    Hirosaki University (2010 from CiNii)

    Articles in CiNii:1

    • Control of Epitaxial Growth of Graphene by Substrate Microfabrication (2010)
  • Enta Yoshiharu ID: 9000283847813

    Hirosaki univ. (2010 from CiNii)

    Articles in CiNii:1

    • LEED/PES analyses on the formation of epitaxial graphene on ultrathin 3C-SiC(111) film (2010)
  • Enta Yoshiharu ID: 9000345209992

    Research Institute of Electrical Communication, Tohoku University (2016 from CiNii)

    Articles in CiNii:1

    • Characteristics of Si/N-Incorporated DLC Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using Hydrogen as a Dilution Gas (2016)
  • Enta Yoshiharu ID: 9000347100448

    弘前大学大学院理工学研究科 (2012 from CiNii)

    Articles in CiNii:1

    • Silicon oxynitridation with N2O gas measured by real-time XPS (2012)
  • Enta Yoshiharu ID: 9000347100508

    弘前大理工 (2012 from CiNii)

    Articles in CiNii:1

    • Formation and characterization of epitaxial graphene on microfabricated Si(100) substrates (2012)
  • Enta Yoshiharu ID: 9000347154671

    弘前大学大学院 (2013 from CiNii)

    Articles in CiNii:1

    • Nanostructures in voids on silicon oxide layer formed by annealing in vacuum (2013)
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